摘要
为了优化载流子存储沟槽栅双极晶体管(CSTBT)的性能,对CSTBT结构进行了电学特性仿真,通过Sentaurus TCAD软件对比了T-IGBT和CSTBT的击穿特性、输出特性以及关断特性,研究了CSTBT N-drift区掺杂浓度和厚度、P-base区掺杂浓度和CSL掺杂浓度对器件的击穿特性、转移特性以及输出特性的影响。结果表明,相较于T-IGBT,优化前的CSTBT的击穿电压提升了约3.4%,正向导通压降减小了约20.9%,关断损耗几乎一致;对于优化后的CSTBT,当N-drift区厚度为158μm、N-drift区掺杂浓度为7×10^(13)cm^(-3)、P-base区掺杂浓度为3×10^(17)cm^(-3)、CSL掺杂浓度为1×10^(16)cm^(-3)时,器件的击穿电压为1959 V,提升了约22%;Von为1.14 V,降低了43%。
To optimize the performance of the carrier storage trench gate bipolar transistor(CSTBT),electrical characteristics of the CSTBT structure are simulated.Using Sentaurus TCAD software,the breakdown characteristics,output characteristics,and turn-off characteristics of T-IGBT and CSTBT are compared.The effects of N-drift region doping concentration and thickness,P-base region doping concentration,and CSL doping concentration on the breakdown characteristics,transfer characteristics,and output characteristics of the CSTBT are investigated.The results show that compared to the T-IGBT,the pre-optimized CSTBT exhibits about 3.4%increase in breakdown voltage,about 20.9%reduction in forward conduction voltage drop,and nearly identical turn-off losses.For the optimized CSTBT,with an N-drift region thickness of 158μm,a N-drift region doping concentration of 7×10^(13)cm^(-3),a P-base region doping concentration of 3×10^(17)cm^(-3),and a CSL doping concentration of 1×10^(16)cm^(-3),the device achieves a breakdown voltage of 1959 V(about 22%improvement),Von is 1.14 V(43%reduction).
作者
李尧
谌利欢
苟恒璐
龙仪
陈文舒
LI Yao;SHEN Lihuan;GOU Henglu;LONG Yi;CHEN Wenshu(School of Electronic and Information Engineering,Lanzhou Jiaotong University,Lanzhou 730070,China;Gansu Institute of Integrated Circuit Industry,Lanzhou 730070,China)
出处
《电子与封装》
2025年第12期97-103,共7页
Electronics & Packaging
基金
国家自然科学基金(61905102,62264008)
兰州市青年科技人才创新项目(2023-QNQ-119)
甘肃省高校青年博士支持项目(2024QB-050)。
关键词
IGBT
击穿特性
输出特性
转移特性
载流子存储层
关断损耗
IGBT
breakdown characteristic
output characteristic
transfer characteristic
carrier storage layer
turn-off loss
