摘要
透明OLED具有双面出光特性,其在抬头显示和可穿戴设备等领域具有广阔应用前景。本文首先设计了Mg∶Ag透明电极,通过降低薄膜膜厚并调控Mg在Ag中的掺杂比例提高透光率,发现Mg∶Ag膜厚为14 nm且掺杂比例1∶1时,电极的透过率为60%,在正置OLED器件中也展现最优的综合性能。然后,结合优化的Mg∶Ag透明电极,在倒置器件中,对空穴和电子传输层进行优化。最后,在倒置器件中,通过在Mg∶Ag阴极外侧蒸镀BCP光取出层来进一步提高器件的性能。结果显示,采用60 nm厚度且Bphen∶Cs_(2)CO_(3)掺杂比例为1∶1的N型电子注入层和40 nm厚度的HAT-CN空穴注入层以及50 nm BCP光取出层时,OLED器件启亮电压降至2.4 V,器件最大电流效率43.1 cd·A^(-1),在10 mA·cm^(-2)的电流密度驱动下,OLED器件两侧出光亮度分别为2237 cd·m^(-2)和1844 cd·m^(-2),两侧发光强度比例为45%∶55%,器件在530 nm处透光率达到82.0%。
Transparent OLEDs have the characteristic of double-sided light emission and have broad application prospects in fields such as head-up displays and wearable devices.In this paper,a Mg∶Ag transparent electrode is first designed.By reducing the thickness of the thin film and regulating the doping ratio of Mg in Ag,the light trans-mittance is improved.It is found that when the thickness of the Mg∶Ag film is 14 nm and the doping ratio is 1∶1,the transmittance of the electrode is 60%,and it also exhibits the best comprehensive performance in the forward OLED device.Subsequently,combined with the optimized Mg∶Ag transparent electrode,the hole and electron transport layers are optimized in the inverted device.Finally,in the inverted device,the performance of the device is further improved by evaporating a BCP light extraction layer on the outer side of the Mg∶Ag cathode.The results show that when an N-type electron injection layer with a thickness of 60 nm and a doping ratio of Bphen∶Cs_(2)CO_(3)of 1∶1,a hole injection layer of HAT-CN with a thickness of 40 nm,and a BCP light extraction layer with a thickness of 50 nm are used,the turn-on voltage of the OLED device drops to 2.4 V,the maximum current efficiency of the device is 43.1 cd·A^(-1).Under the driving of a current density of 10 mA·cm^(-2),the light emission brightness on both sides of the OLED device is 2237 cd·m^(-2)and 1844 cd·m^(-2)respectively,the ratio of the luminous intensity on both sides is 45%∶55%,and the light transmittance of the device at 530 nm may reach 82.0%.
作者
李佳坤
朱冠成
邹建华
彭俊彪
LI Jiakun;ZHU Guancheng;ZOU Jianhua;PENG Junbiao(State Key Laboratory of Luminescent Materials and Devices,South China University of Technology,Guangzhou 510641,China;Guangzhou Newvision Optoelectronic Technology Co.Ltd,Guangzhou 510630,China)
出处
《发光学报》
北大核心
2025年第12期2316-2324,共9页
Chinese Journal of Luminescence
基金
国家重点研发计划(2022YFB3603103)
广东省高等学校能源与信息高分子材料基础研究卓越中心。
