摘要
The wide band gap characteristics of gallium oxide make it very suitable for the preparation of solar-blind ultra-violet photodetectors.The responsivity of ultraviolet photodetectors based on thin films is often low.However,nanomaterials have excellent photoelectric properties in device applications due to the high stability brought by high specific surface area and high crystal quality.Here,we successfully depositedβ-Ga_(2)O_(3) nanopores on the double-pass ordered porous AAO tem-plate by PLD.The porous AAO template is used as the growth space of nanomaterials,and the gallium oxide material is filled into the pores of the template to form a nanotube structure.By optimizing the preparation process,the relationship be-tween the performance of gallium oxide nanopores and the growth time was studied in depth.With the increase of growth time,the responsivity of the detector was improved.The rise timeτr=0.7 s,the decay timeτ_(d)=1.3 s,and the responsivity reached 4.63 mA·W^(-1),which was higher than 2.24 mA·W^(-1)of the responsivity of silicon-based gallium oxide nanorods.
氧化镓的宽禁带特性使其非常适合制备日盲型紫外光电探测器。基于薄膜的紫外光电探测器的响应度往往较低。然而,由于高比表面积和高晶体质量带来的高稳定性,纳米材料在器件应用中具有优异的光电性能。本文通过PLD成功地在双通有序多孔AAO模板上沉积了β-Ga_(2)O_(3)纳米孔。利用多孔AAO模板作为纳米材料的生长空间,将氧化镓材料填充到模板的孔道中,形成纳米管结构。通过优化制备工艺,深入研究了氧化镓纳米管的性能与生长时间的关系,从而提高了探测器的响应度。
出处
《发光学报》
北大核心
2025年第12期2302-2308,共7页
Chinese Journal of Luminescence
基金
国家科学自然基金(U22A2073)。
