摘要
近红外荧光粉转换型发光二极管(NIR pc-LED)是一种极具应用前景的小型化近红外光源,但由于长波宽带近红外荧光粉的缺乏,使得其发展受到制约。本工作采用高温固相法制备了一系列Hf1-xTe_(3)O_(8)(HTO)∶xCr^(3+)(x=0~0.15)长波宽带近红外荧光粉,并分析了其晶体结构和发光性能。研究结果表明,在450 nm的蓝光激发下,HTO∶Cr^(3+)近红外荧光粉展现出长波宽带近红外光,其发射主峰位于865 nm,半高宽为167 nm(2149 cm^(-1))。晶体场强度计算结果表明,该长波宽带近红外发光源于Cr^(3+)占据弱晶体场(Dq/B=1.97)Hf^(4+)单一晶体学格位。进一步地,利用优化后的HTO∶Cr^(3+)近红外荧光粉与蓝光LED芯片制备了NIR pc-LED器件,通过设计不同场景的应用实验,证明该荧光粉在夜视、生物医学成像等方面具有一定的应用价值。
Near-infrared phosphor-converted light-emitting diodes(NIR pc-LEDs)are promising candidates for compact NIR light sources.However,their development is hindered by the scarcity of long wavelength and broad-band NIR phosphors.In this work,a series of long wavelength and broadband NIR phosphors,Hf1−xTe_(3)O_(8)(HTO)∶xCr^(3+)(x=0-0.15)were successfully synthesized.The crystal structure and photoluminescence properties were systematically investigated.Under 450 nm excitation,HTO∶Cr^(3+)phosphor exhibits a long wavelength and broadband NIR emission peaking at 865 nm with a full width at half maximum of 167 nm(2149 cm−1).Crystal field strength calcula-tions reveal that the NIR emission is attributed to Cr^(3+)ions occupying a single crystallographic site of Hf^(4+)within weak crystal field environment(Dq/B=1.97)in HTO.Moreover,an NIR pc-LED device was fabricated by combining the optimized HTO∶Cr^(3+)phosphor with a blue LED chip.The application experiments also demonstrate that HTO∶Cr^(3+)has potential in night vision and biomedical imaging applications.
作者
韩哲
董晓玲
王晓超
吴丹
HAN Zhe;DONG Xiaoling;WANG Xiaochao;WU Dan(Inner Mongolia People’s Hospital Inner Mongolia Autonomous Region,Hohhot 010010,China;Inner Mongolia Key Laboratory of Microscale Physics and Atom Innovation,School of Physical Science and Technology,Inner Mongolia University,Hohhot 010021,China)
出处
《发光学报》
北大核心
2025年第12期2282-2292,共11页
Chinese Journal of Luminescence
基金
内蒙古医学科学院公立医院科研联合基金项目(2023GLLH0031)。
