摘要
The direct growth of InGaAs high-electron-mobility transistors(HEMTs)on silicon facilitates their low-cost production on large-scale wafers.On a U-shaped patterned Si(001)substrate,we have achieved a high-quality In_(0.36)Ga_(0.64)As film with a threading dislocation density of∼7×10^(6)cm^(−2).The fabricated HEMT devices exhibit outstanding electrical characteristics,including a high Hall mobility of 4732 cm^(2)/V·s and an effective mobility of 3305 cm^(2)/V・s at room temperature.Through precise gate-recess processing and surface passivation,both depletion-mode and enhancement-mode devices were realized with transconductances reaching 500mS/mm for a channel length of 100 nm.These results indicate their significant potential for the development of next-generation high-speed Ⅲ-Ⅴ electronic devices on silicon platforms that are compatible with CMOS technology.
基金
supported by the National Natural Science Foundation of China (Grant Nos. 92165207 and 62225407)
the Innovation Program for Quantum Science and Technology (Grant No. 2021ZD0302300)。
