摘要
针对长波长InGaN基发光二极管(light emittingdiode,LED)因高铟组分引发强压电极化场,导致发光效率下降的问题,设计了梯度铟组分多量子阱结构,基于Silvaco-TCAD软件构建了梯度铟组分In-GaN/GaN多量子阱模型,对器件的发光功率、功率谱密度、载流子分布及极化电荷浓度进行了仿真计算。模拟结果表明:在具有梯度铟组分多量子阱结构器件中,最大发光波长为584.8 nm,实现了黄光发射。梯度铟组分多量子阱结构降低了极化电荷浓度。与固定铟组分结构器件相比,该梯度结构促使的发光波长由507.7 nm红移至584.8 nm。同时梯度铟组分削弱了量子阱能带倾斜,提高了电子与空穴之间的波函数重叠,发光功率提升了11.6%。本文为高效长波长InGaN基LED的设计及实现提供了重要参考。
For the issue of decreased luminous efficiency of long-wavelength InGaN based light emitting diodes(LEDs)caused by high indium composition induced high-voltage polarization fields,a structure of gradient indium component multi quantum well is designed,and the corresponding models of InGaN/GaN multi quantum well with gradient indium component are constructed through Silvaco-TCAD.The luminous power,power spectral density,carrier distribution and polarization charge concentration of the devices are simulated and calculated.The simulation results show that the maximum luminous peak wavelength of the devices with a gradient indium component structure is 584.8 nm,realizing the yellow lights emission.The polarization charge concentration is reduced due to the gradient indium component structure.Compared to fixed indium component devices,the luminous peak wavelength of the devices with gradient indium components red shift from 507.7 nm to 584.8 nm.While,the band tilt of the quantum well is decreased,the overlap of electron hole wave functions is enhanced,and the luminous power of the device is increased by 11.6% due to the gradient indium component structure.This work provides an effective reference for the design and implementation of high-efficiency long wavelength InGaN based LEDs.
作者
黄梓睿
范高宁
臧柯
范超
HUANG Zirui;FAN Gaoning;ZANG Ke;FAN Chao(School of Electronics and Information Engineering,Hebei University of Technology,Tianjin 300401,China)
出处
《河北工业大学学报》
2025年第6期1-6,共6页
Journal of Hebei University of Technology
基金
河北省自然科学基金资助项目(F2025202038)。
关键词
发光二极管
极化电荷
量子限制斯塔克效应
组分渐变
长波长光电器件
light-emitting diodes
polarization charges
quantum-confined Stark effect
component gradient
long wavelength optoelectronic devices
