摘要
对于SiC器件驱动技术的研究一直是国内外学者关注的热点问题。现有有源驱动技术通过改变驱动电阻、驱动电压或电流实现开关暂态的调控,所需元器件多,驱动板体积大、成本高。为此,提出了1种基于谐振驱动的全桥有源驱动技术,仅通过驱动开关管的开通关断来切换构建不同驱动回路,形成不同驱动电流,即可实现开关暂态的调节。首先以1/4周期全桥谐振驱动为功率管的基准驱动模式,接着通过对功率管开通过程中各个阶段的分析给出了有源驱动开关管时序的具体设计方法,最后通过仿真和实验验证发现所提驱动方式能够减小开通过程87.0%的电流过冲和关断过程4.20%的电压过冲,并能实现特定阶段宽范围地灵活调速。
The research on the driving technology for SiC devices has always been a hot issue for scholars both at home and abroad.The existing active drive technology realizes the regulation of switching transient by changing the drive resistance,drive voltage or current.It requires many components,and the drive board is bulky and costly.Therefore,a full-bridge active drive technology based on resonant drive is proposed.By switching on and off the drive switch tube only,different drive circuits are constructed to form different drive currents,thus realizing the switch transient adjustment.First,the 1/4-period full-bridge resonant drive is taken as a reference drive mode for the power tube.Then,a specific design method for active drive switch timing is given by analyzing various stages during the switching on process of the power tube.Finally,through simulations and experimental verification,it is found that the drive mode can reduce 87.0%of current overshoot during the switching on process and 4.2%of voltage overshoot during the switching off process,and it can also achieve flexible speed regulation in a wide range of specific stages.
作者
陈益华
彭晗
辛晴
CHEN Yihua;PENG Han;XIN Qing(School of Electrical and Electronic Engineering,Huazhong University of Science and Technology,Wuhan 430074,China;State Key Laboratory of Advanced Electromagnetic Technology,Wuhan 430074,China)
出处
《电源学报》
北大核心
2025年第7期338-348,共11页
Journal of Power Supply
基金
国家自然科学基金资助项目(52007077,52277178)。
关键词
碳化硅金属氧化物半导体场效应管
有源驱动
暂态调节
电流过冲
电压过冲
SiC metal oxide semiconductor field effect transistor(MOSFET)
active drive
transient speed adjustment
current overshoot
voltage overshoot
