摘要
为研究中子位移损伤对NPN型双极晶体管瞬时电离辐射光电流响应的影响,利用西安脉冲反应堆、“强光一号”加速器依次开展了中子位移损伤效应及瞬时电离辐射效应实验研究,获得了不同注量中子辐照后双极晶体管瞬时电离辐射二次光电流的响应规律。研究结果表明:随辐照中子注量的变化,瞬时电离辐射二次光电流幅值、持续时间有较大差异。分析认为,中子位移损伤对双极晶体管二次光电流幅值造成的响应差异与集电极产生的电流大小有关,低电流注入状态与高电流注入状态相比,中子位移损伤影响更明显;二次光电流持续时间主要受双极晶体管基区少数载流子复合的影响。本文研究结果对提高双极工艺器件在复杂辐射环境下的抗辐射加固设计水平具有重要的理论意义。
In order to study the effect of transient photocurrent response of the NPN bipolar transistor induced by neutron displacement damage,the experiments of neutron displacement damage effect and transient ionizing radiation effect were carried out on Xi’an pulsed reactor and“Qiangguang-Ⅰ”accelerator respectively,and the secondary photocurrent responses were obtained after different neutron fluences irradiation.The results show that as the irradiated neutron fluence varies,the amplitude and duration of secondary photocurrent have obvious discrepancy.It is considered that the response difference of secondary photocurrent amplitude induced by neutron displacement damage is related to the collector current of bipolar transistor.When transient dose rate is low,the current generated by transistor collector is small,the current gain decreases gradually with the increase of irradiated neutron fluence,and according to previous studies,the secondary photocurrent amplitude is positively correlated with the current gain of bipolar transistor,so the secondary photocurrent amplitude decreases gradually with the increase of irradiated neutron fluence.Whereas,when transient dose rate is high,the current generated by the transistor collector is large,the influence of irradiated neutron fluence on current gain can be neglected,therefore,the response difference of secondary photocurrent amplitude is not affected by the irradiated neutron fluence.The secondary photocurrent duration of transient ionizing radiation includes both generation and decay,the generation time of secondary photocurrent is basically same in the process of transient ionizing radiation after different neutron fluences irradiation,so the response difference of secondary photocurrent duration mainly depends on the decay time.The electron transport of secondary photocurrent passes through the whole space region from the emitter to the collector,therefore,all the minority carrier recombination processes will occur during the period.The decay time of secondary photocurrent is mainly affected by the minority carrier lifetime of the base region,and the ratio of the decay time of secondary photocurrent before and after neutron irradiation is directly related to the average lifetime of minority carrier in the base region.The ratio of the minority carrier average lifetime before and after neutron irradiation can be obtained by analyzing the proportion of the base current increment.By comparing the theoretical derivation with the experimental results,it is found that the decay time of secondary photocurrent decreases monotonously with the increase of irradiated neutron fluence.This work has important theoretical significance for improving the radiation hardening design of bipolar process devices under complex radiation environment.
作者
刘炜剑
李瑞宾
于士淋
白小燕
刘岩
金晓明
齐超
李俊霖
王晨辉
LIU Weijian;LI Ruibin;YU Shilin;BAI Xiaoyan;LIU Yan;JIN Xiaoming;QI Chao;LI Junlin;WANG Chenhui(National Key Laboratory of Intense Pulsed Radiation Simulation and Effect,Northwest Institute of Nuclear Technology,Xi’an 710024,China)
出处
《原子能科学技术》
北大核心
2025年第12期2755-2762,共8页
Atomic Energy Science and Technology
基金
国家自然科学基金(11835006)。
关键词
NPN型双极晶体管
中子位移损伤
瞬时电离辐射
光电流响应
NPN bipolar transistor
neutron displacement damage
transient ionizing radiation
photocurrent response
