摘要
为了探究工业硅生产炉外精炼最佳的工艺条件,基于L9(3^(4))表设计了四因素三水平正交试验,研究了精炼温度、精炼时间、精炼气体混合比例、造渣剂的用量对工业硅产品纯度及杂质脱除率的影响,采用极差分析法得出了研究结果。结果表明:各因素对工业硅纯度及杂质脱除率影响的大小顺序为精炼温度>精炼时间>精炼气体混合比例>造渣剂的用量;结合成本分析,确定了最佳水平组合方案为精炼温度1550℃、精炼时间60 min、气体混合比例为50%氧气、造渣剂的用量为50 kg,通过对炉外精炼工艺条件的优化控制,提高工业硅产品质量的同时降低了企业生产成本。
In order to explore the optimal process conditions for refining industrial silicon outside the furnace,a four factor three-level orthogonal experiment was designed based on L9(3^(4))table to study the effects of refining temperature,refining time,refining gas mixing ratio,and slag forming agent dosage on the purity and impurity removal rate of industrial silicon products.The research results were obtained using range analysis method.The results show that the order of the influence of various factors on the purity and impurity removal rate of industrial silicon is refining temperature>refining time>refining gas mixing ratio>slag making agent dosage;Based on cost analysis,the optimal combination scheme was determined as refining temperature of 1550℃,refining time of 60min,gas mixture ratio of 50%oxygen,and slag making agent dosage of 50 kg.By optimizing and controlling the refining process conditions outside the furnace,the quality of industrial silicon products was improved while reducing production costs for the enterprise.
作者
陈伟华
严宝年
田学鹏
郑志伟
CHEN Weihua;YAN Baonian;TIAN Xuepeng;ZHENG Zhiwei(Jiayuguan Dayou Enterprise Group Co.Ltd.,Silicon Branch,Jiayuguan 735100,China)
出处
《甘肃冶金》
2025年第5期132-134,140,共4页
Gansu Metallurgy
基金
嘉峪关市科技计划项目《高纯晶硅用工业硅产品研发》(QKJ24-01)。
关键词
工业硅
炉外精炼
正交试验
杂质脱除率
工艺优化
industrial silicon
refining outside the furnace
orthogonal experiment
impurity removal rate
process optimization
