摘要
硅光电倍增管(SiPM)是光电探测常用器件,在辐射探测领域应用广泛,但其增益对环境温度变化敏感,是造成能谱测量结果温度漂移的重要原因。为了深入探究温度对基于SiPM的闪烁体探测器增益的影响规律,本文以MicroFC-SMA-30035型SiPM的掺铊碘化铯(CsI(TI))探测器为研究对象,结合电子学模型和CsI(TI)晶体光产额对温度的依赖关系,建立了探测器的温度响应模型。在^(60)Co和^(137)Cs同位素源条件下进行温度响应试验,测量探测器输出能谱峰值能量在−50~50℃温度范围内的变化,从而获得探测器增益随温度变化的实验数据。研究结果表明,建立的模型准确地预测了探测器增益的温度依赖性,与实验结果基本一致。增益随着温度升高先增大后减小。当温度为−25℃时,增益达到最大值。该模型对预测基于SiPM的闪烁体探测器的温度效应具有重要的指导意义。
Silicon photomultipliers(SiPMs)are widely used as photodetection devices in radiation detection applications.However,their gain exhibits significant sensitivity to ambient temperature changes,which is a primary cause of energy spectrum measurement drift.To systematically investigate the temperature dependence of gain in scintillator-based SiPM detectors,a CsI(Tl)detector coupled with a MicroFC-SMA-30035 SiPM is selected as an example.By using the detector electronics model and the temperature dependence of the light yield of CsI(Tl)crystal,a temperature response model for the Cs(Tl)detector is established.Then,experiments are conducted under the conditions of^(60)Co and^(137)Cs isotopic sources to measure the change in detector output spectra within the temperature range of−50℃to 50℃,then experimental data on the temperature dependence of detector gain are obtained.The results show that the established model accurately predicts the temperature dependence of detector gain,which is basically consistent with the experimental results.Notably,the gain initially increases and then decreases with rising temperature,reaching its maximum value at−25℃.The established model has important guiding significance for predicting the temperature effects in scintillator-based SiPM detectors.
作者
吕克杰
甘龙飞
赵娜
聂国政
祝庆军
LYU Kejie;GAN Longfei;ZHAO Na;NIE Guozheng;ZHU Qingjun(School of Microelectronics and Physics,Hunan University of Technology and Business,Changsha 410205,China;Institute of Plasma Physics,Hefei Institutes of Physical Science,Chinese Academy of Sciences,Hefei 230031,China)
出处
《现代应用物理》
2025年第5期57-62,共6页
Modern Applied Physics
基金
国家自然科学基金资助项目(12075014,12305268)
国家辐射应用创新中心资助项目(KFZC2021010101)
湖南省自然科学基金资助项目(2023JJ30195,2024JJ6184)
湖南省教育厅科研基金资助项目(22A0435,22B0655,23A0454)
长沙市自然科学基金资助项目(kp2208059)。
关键词
光电倍增管
温度效应
光电探测
电子学仿真
silicon photomultiplier
temperature effect
photoelectric detection
electronic simulation
