摘要
Recent advances in all-inorganic perovskite semiconductors have garnered significant research interest due to their potential for high-performance optoelectronic devices and enhanced stability under harsh environmental conditions.A deeper understanding of their structural,chemical,and physical properties has driven notable progress in addressing challenges related to electrical characteristics,reproducibility,and long-term operational stability in perovskite-based memristors.These advancements have been realized through composition engineering,dimensionality modulation,thin-film processing,and device optimization.This review concisely summarizes recent developments in all-inorganic perovskite memristors,highlighting their diverse material properties,device performance,and applications in artificial synapses and logic operations.We discuss key resistance-switching mechanisms,optimization strategies,and operational capabilities while outlining remaining challenges and future directions for perovskitebased memory technologies.
基金
supported by the JST SPRING Grant number JPMJSP2131
funded by the Research Fellow Scheme from The Chinese University of Hong Kong
Universiti Teknologi Malaysia AJ090000.6700.09453-Tabung Pembayaran Lantikan Skim Prominent Visiting Researcher Scheme JTNCPI。
