摘要
本文对多晶硅生产中三氯氢硅的合成工艺进行了简单介绍,重点介绍了三氯氢硅的合成工艺中,三氯氢硅合成炉的4种升温方式,即氮气升温、氢气升温、氯硅烷升温和氢气与氯硅烷混合气升温,对这4种升温方式的优缺点进行了比较。
A brief introduction to the synthesis process of trichlorosilane in polycrystalline silicon production was provided,with a focus on four heating methods for the trichlorosilane synthesis furnace during the temperature ramp-up phase.These methods include nitrogen heating,hydrogen heating,chlorosilane heating,and mixed hydrogen-chlorosilane gas heating.The advantages and disadvantages of these four heating approaches for the trichlorosilane synthesis furnace were compared.
作者
王世棋
李兵
向春林
明勇
庹如刚
WANG Shiqi;LI Bing;XIANG Chunlin;MING Yong;TUO Rugang(Inner Mongolia Tongwei Green Base Materials Co.,Ltd.,Baotou 014060,China;Sichuan Yongxiang Co.,Ltd.,Leshan 614800,China)
出处
《化工技术与开发》
2025年第10期93-96,共4页
Technology & Development of Chemical Industry
关键词
三氯氢硅
合成
多晶硅
升温方式
trichlorosilane
synthesis
polysilicon
heating method
