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Burst Laser-Driven Plasmonic Photochemical Nanolithography of Silicon with Active Structural Modulation

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摘要 Femtosecond laser ablation-driven periodic surface structuring offers a promising method for large-scale and high-throughput nanolithography technique.However,the self-organized periodic structures typically manifest constraints in terms of tunable period and depth,as well as suboptimal regularity,which restricts their broader application potential.Here,in terms of a rarely explored laser-induced photochemical mechanism for nonablative structuring,we demonstrate manufacturing of sub-wavelength oxidative grating structures on silicon films with active structural modulation.In this scenario,the plasmonic field plays a pivotal role in dragging oxygen ions from surface into the silicon,greatly speeding up oxidation rates.While high oxygen doping levels can already be achieved with single-pulse exposure,far superior results are obtained with the application of 40-MHz burst mode pulse trains,mitigating the formation of excessively large nanocrystallites.Furthermore,it is revealed that the periodicity and modulation depth of laser-writing nanograting are both dependent on the number of pulse per burst.This offers a convenient scheme for actively controlling laser plasmonic lithography.
出处 《Ultrafast Science》 2025年第1期23-30,共8页 超快科学(英文)
基金 supported by the National Natural Science Foundation of China(12474317 and 62105269).
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