摘要
本文采用重结晶法和区域熔炼法提纯γ-CuI原料,使用坩埚下降法生长出了不同Zn离子浓度掺杂的γ-CuI单晶,并对其晶体结构、光致发光、X射线激发发射光谱和荧光寿命进行了详细研究。XRD和SEM测试结果表明,所合成的样品为高纯的γ-CuI,Zn离子能掺入γ-CuI单晶中。光致发光光谱和X射线激发光谱结果表明,Zn离子掺杂后自由激子和Cu+空位的发射得到增强,深能级发射被抑制。在Zn离子掺杂浓度为5%时,Cu_(0.95)I:Zn_(0.05)晶体的荧光寿命为0.36 ns,明显优于γ-CuI的0.62 ns。
In this paper,high purity γ-CuI raw materials were purified using recrystallization and zone melting methods,and γ-CuI single crystals doped with different Zn ion concentrations were grown by Bridgman method.The crystal structure,photoluminescence,X-ray excited optical luminescence,and fluorescence lifetime of the samples were thoroughly investigated.X-ray diffraction and scanning electron microscopy analyses confirm the high purity of the synthesized γ-CuI samples and the successful incorporation of Zn ions into the γ-CuI lattice.The photoluminescence and X-ray excited emission spectra indicate that Zn ion doping enhanced the emissions of free excitons and Cu+vacancies while suppressing deep-level emissions.At a Zn ion doping concentration of 5%,the Cu_(0.95)I:Zn_(0.05) crystal demonstrats a fluorescence lifetime of 0.36 ns,which is significantly better than that of γ-CuI(0.62 ns).
作者
陈灿
胡祎哲
张智瑾
潘建国
潘尚可
CHEN Can;HU Yizhe;ZHANG Zhijing;PAN Jianguo;PAN Shangke(School of Materials Science and Chemical Engineering,Ningbo University,Ningbo 315211,China)
出处
《人工晶体学报》
北大核心
2025年第9期1558-1565,共8页
Journal of Synthetic Crystals
基金
国家自然科学基金(12375180,61775108)。
