摘要
随着固态化、模块化、小型化脉冲功率系统的需求不断加深,宽禁带半导体光电导开关(PCSS)由于高功率和快响应等特点引起了广泛的关注。基于高纯半绝缘(HPSI)碳化硅(SiC)衬底,研制了体结构SiC PCSS。在此基础上,提出了一种基于氟化镁和二氧化钛的高反射镜SiC光电导开关封装结构,有效地提高了光电导开关的光能利用率,搭建了基于新封装结构高纯SiC光电导开关的亚纳秒短脉冲产生电路,优化了脉冲形成线与光电导开关的连接方式,设计了开槽型脉冲形成线结构,减小了电路的寄生电感,缩短了电路的响应时间。采用新封装结构和脉冲形成线,在偏置电压为10 kV、激光波长为532 nm、激光脉冲半高宽为500 ps、激光脉冲能量为90μJ和负载为50Ω的工作条件下,实验获得了电压幅值为7.6 kV的亚纳秒短脉冲,脉冲波形的上升沿和半高宽分别为620 ps和2.2 ns,对应的输出峰值功率为1.1 MW,系统的光电功率增益达到7.7 dB。
[Background]With the increasing demand for solid-state,modular,and miniaturized pulsed power systems,wide-band-gap photoconductive semiconductor switches(PCSSs)have attracted significant attention due to their high-power capacity and fast response characteristics.[Purpose]This study aims to develop a vertical PCSS on high-purity semi-insulating(HPSI)4H-SiC substrate with an improved package structure to enhance laser energy utilization,while optimizing the pulse-forming circuit to minimize parasitic effects.[Methods]We fabricated vertical PCSSs on HPSI 4H-SiC substrates and proposed a novel package structure with a high reflector based on MgF2/TiO2 to improve laser energy utilization.And a slotted pulse-forming line structure is introduced to reduce parasitic inductance.[Results]Under 10 kV bias voltage with 532 nm laser excitation(500 ps pulse width,90μJ energy),the system generated 7.6 kV pulses across 50Ωload with 620 ps rise time and 2.2 ns pulse width.The peak output power reached 1.1 MW with 7.7 dB photoelectric power gain.[Conclusions]The developed SiC PCSS with high-reflector package demonstrates enhanced laser energy utilization.The slotted pulse-forming line effectively reduces parasitic inductance,enabling high-power,fast-response performance suitable for compact pulsed power systems.
作者
李飞
黄嘉
刘京亮
侯钧杰
陈湘锦
Li Fei;Huang Jia;Liu Jingliang;Hou Junjie;Chen Xiangjin(The 13th Research Institute of China Electronics Technology Group Corporation,Shijiazhuang 050057,China;Science and Technology Research Institute of XJ Electric Co,Ltd,Xi’an 710000,China)
出处
《强激光与粒子束》
北大核心
2025年第9期13-19,共7页
High Power Laser and Particle Beams
关键词
光电导开关
高纯半绝缘碳化硅
光电转换效率
峰值输出功率
光电功率增益
photoconductive semiconductor switch
high-purity semi-insulating 4H-SiC
photoelectric conversion efficiency
peak output power
photoelectric power gain
