摘要
在半导体薄膜中钽靶用于阻挡铜片与硅片之间的相互扩散,钽靶组织的均匀性影响溅射速率及半导体薄膜的均匀性。概述了熔炼工艺对钽靶纯度的影响,钽靶的锻造工艺,单向轧制、周向轧制、异步交叉轧制和低温轧制工艺的特点及其对钽靶微观组织和晶体取向的影响,不同工艺轧制和退火的钽靶的再结晶行为等。
Tantalum target is used to suppress the interdiffusion between copper and silicon slices in semiconductor film,and the structural uniformity of tantalum target will have an influence on the sputtering rate and uniformity of the semiconductor film.The following contents,among which:the effect of melting processes on purity of tantalum target,the forging technology of tantalum target,the features of rolling processes such as unidirectional rolling,clock rolling,asymmetric cross rolling,and cryogenic rolling and their effect on microstructure and crystal orientation of tantalum target,and the recrystallization behavior of tantalum target rolled and annealed by different processes,were summarized.
作者
吴昊
陈昊
贾志强
张龙
WU Hao;CHEN Hao;JIA Zhiqiang;ZHANG Long(Xi’an Noble Rare Metal Materials Co.,Ltd.,Xi’an Shaanxi 710201,China)
出处
《上海金属》
2025年第5期7-13,共7页
Shanghai Metals
基金
国家重点研发计划(2018YFC1901704)。
关键词
钽靶
微观组织
织构
轧制
退火
tantalum target
microstructure
texture
rolling
annealing
