摘要
基于SAR ADC结构采用0.18μm CMOS工艺设计实现了一种宽温度区间传感器单片集成电路。感温电路基于双极型晶体管的PTAT特性设计,并使用动态匹配技术减小失配,使用斩波技术减小噪声。为了在宽感温区间工作,在SAR ADC的逻辑部分设计了一种改进的TSPC寄存器。仿真结果显示芯片可在-110℃~+120℃温度区间内工作,测温精度为-3.2℃~+3.3℃。芯片内核面积为0.42 mm^(2),功耗为9.76 mW。
A digital SAR ADC-based temperature sensor in 0.18μm CMOS process is presented.The temperature sensing circuit is de-signed based on the PTAT characteristics of bipolar transistors,and it uses dynamic matching technology to reduce mismatch and chopper technology to reduce noise.In order to expand the temperature measurement range,the improved TSPC register is used in the SAR ADC logic circuit.The simulation results show that the temperature measurement range of the temperature sensor is-110℃~+120℃,and the temperature measurement accuracy is-3.2℃~+3.3℃.The chip aera is 0.42 mm^(2)and its power consumption is 9.76 mW.
作者
王洋
刘依桦
郭宇锋
高昊
张翼
WANG Yang;LIU Yihua;GUO Yufeng;GAO Hao;ZHANG Yi(School of Electronic Information Engineering,Nanjing Vocational University of Industry Technology,Nanjing Jiangsu 210023,China;National and Local Joint Engineering Laboratory of RF Integration and Micro-Assembly Technology,Nanjing Jiangsu 210023,China;College of Integrated Circuit Science and Engineering,Nanjing University of Posts and Telecommunications,Nanjing Jiangsu 210023,China;Silicon Austria Labs,A-4040 Linz,Austria)
出处
《电子器件》
2025年第4期932-936,共5页
Chinese Journal of Electron Devices
基金
南京工业职业技术大学科研启动基金项目(YK21-02-03)
射频集成与微组装技术国家地方联合工程实验室开放课题项目(KFJJ20210206)。
