摘要
采用磁控溅射技术,以In2O_(3)和SnO_(2)质量比为9∶1的陶瓷作为溅射靶材,以氩气和氧气的混合气体为溅射气体,在石英衬底上沉积厚度约60 nm的氧化铟锡(ITO)薄膜。研究氩气流量和退火温度对ITO薄膜的方块电阻和透射率的影响规律。结果表明,在氩气流量为55和70 cm^(3)/min条件下,制备的ITO薄膜的方块电阻和透射率平均值分别为88.2Ω/□和78.8%、95.2Ω/□和78.2%,在经过550、580、600℃温度退火600 s后,ITO薄膜的方块电阻分别降至29.6、31.8、43.9Ω/□(氩气流量55 cm^(3)/min)和31.0、32.2、46.3Ω/□(氩气流量70 cm^(3)/min),而透射率分别升至85.4%、85.5%、83.2%(氩气流量55 cm^(3)/min)和85.7%、85.3%、82.9%(氩气流量70 cm^(3)/min)。即退火后,ITO薄膜的方块电阻减小、透射率增大,但是ITO薄膜的方块电阻随着退火温度的升高而增大,透射率随退火温度的升高整体呈减小趋势。
Indium tin oxide(ITO)films with thickness approximately 60 nm were deposited on quartz substrates by magnetron sputtering technology,using a ceramic(a mass ratio of In2O_(3)and SnO_(2)at 9∶1)as sputtering target and mixed gases(Ar and O_(2))as sputtering gas.The influences of Ar flow rate and annealing temperature on sheet resistance and transmittance of ITO films were studied.Results shows that the ITO films prepared at Ar flow rates of 55 and 70 cm^(3)/min exhibit average sheet resistances and transmittances of 88.2Ω/□and 78.8%,95.2Ω/□and 78.2%,respectively.After annealing at temperatures of 550,580,600℃for 600 s,the sheet resistances decrease to 29.6,31.8,43.9Ω/□(55 cm^(3)/min Ar flow rate)and 31.0,32.2,46.3Ω/□(70 cm^(3)/min Ar flow rate),and the transmittances increase to 85.4%,85.5%,83.2%(55 cm^(3)/min Ar flow rate)and 85.7%,85.3%,82.9%(70 cm^(3)/min Ar flow rate).The sheet resistance decreases and transmittance increases after annealing.However,the sheet resistance increases and the transmittance generally shows a decreasing trend with the increase of annealing temperature.
作者
许德裕
魏爱香
袁新生
Xu Deyu;Wei Aixiang;Yuan Xinsheng(School of Information and Intelligent Engineering,Guangzhou Xinhua University,Dongguan 523133,China;School of Biomedical Engineering,Guangzhou Xinhua University,Guangzhou 510520,China)
出处
《微纳电子技术》
2025年第9期102-107,共6页
Micronanoelectronic Technology
