摘要
研制了一款E波段高效率GaN功率放大器单片微波集成电路(MMIC)。通过优化器件结构、GaN高电子迁移率晶体管(HEMT)材料结构,采用电子束T型栅工艺,制备了栅长0.1μm的4×25μm GaN HEMT。测试结果表明,该器件最大饱和电流密度为1.2 A/mm,峰值跨导为540 mS/mm,小信号下测试截止频率fT和最大振荡频率f_(max)分别为110 GHz和240 GHz。采用上述工艺设计了GaN功率放大器MMIC,在工作电压18 V、电流密度200 mA/mm的测试条件下,在71~78 GHz频段内,其饱和输出功率为33.0~33.5 dBm,饱和输出功率密度达到2.49 W/mm,功率附加效率大于14.8%,功率附加效率最大值达到21.1%,线性增益大于19.0 dB。该MMIC可广泛用于5G通信发射前端。
An E-band high-efficiency GaN power amplifier monolithic microwave integrated circuit(MMIC)was developed.A 4×25μm device with a gate length of 0.1μm was fabricated on GaN high electron mobility transistor(HEMT)epitaxial wafers by optimizing design and AlGaN/GaN HEMT structure and electron beam T-gate process.Test results show the device has a maximum saturation current density of 1.2 A/mm,a peak transconductance of 540 mS/mm,a small signal a cutoff frequency(f_(T))of 110 GHz and a maximum oscillation frequency(f_(max))of 240 GHz.Using this process,a GaN power amplifier MMIC was designed.Under test conditions of 18 V working voltage and 200 mA/mm current density,the circuit achieves saturated output power of 33.0-33.5 dBm with a power density of 2.49 W/mm,power-added efficiency(PAE)above 14.8%with a peak PAE of 21.1%,and linear gain above 19.0 dB at 71-78 GHz.This MMIC can be widely applied in 5G communication transmitter front-ends.
作者
廖龙忠
何美林
毕胜赢
梅崇余
周国
付兴中
Liao Longzhong;He Meilin;Bi Shengying;Mei Chongyu;Zhou Guo;Fu Xingzhong(Beijing Guolian Wanzhong Semiconductor Technology Co.,Ltd.,Beijing 101300,China;The 13th Research Institute,CETC,Shijiazhuang 050051,China;Hebei Xiongan Taixin Electronics Technology Co.,Ltd.,Shijiazhuang 050051,China;Jiangsu HanTop Photo-Materials Co.,Ltd.,B&C Group,Xuzhou 221399,China)
出处
《微纳电子技术》
2025年第9期11-16,共6页
Micronanoelectronic Technology
