摘要
在氧化镓纳米带中进行掺杂可以有效调控其光电特性,从而拓展材料的应用潜力。基于碳热还原法制备了宽度最高达到100μm的β-Ga_(2)O_(3)纳米带,并通过Al_(2)O_(3)中Al元素热扩散方式实现了β-Ga_(2)O_(3)纳米带的Al掺杂,XRD和TEM测试结果显示出Al掺杂后纳米带仍然是单晶且结晶度优异。进一步提取了Al掺杂单根超宽纳米带制备了叉指电极MSM型光电探测器并与未掺杂的纳米带器件进行了性能对比。测试结果表明,非故意掺杂β-Ga_(2)O_(3)纳米带对254 nm的紫外光有良好的响应,光电流达到1.5μA,对185 nm紫外光相对较弱而只有13 nA。Al掺杂对β-Ga_(2)O_(3)纳米带的暗电流影响不大,但254 nm紫外光照下的电流为31 nA,降低至未掺杂时的2%。然而Al掺杂器件在185 nm紫外光照下的电流为44 nA,与未掺杂时相比提高了238%。这一结果归因于Al掺杂引发了β-Ga_(2)O_(3)纳米带中的晶格畸变从而导致其禁带宽度增大,紫外吸收峰向短波长方向发生偏移。本文实现了Al掺杂调控β-Ga_(2)O_(3)纳米带的光电特性,将为氧化镓单晶纳米带在光电方向的研究提供有益的参考。
Doping in gallium oxide nanobelt can effectively regulate its photoelectric properties,thereby expanding the application potential of this material.In this paper,β-Ga_(2)O_(3)nanobelts with width up to 100μm are prepared by the carbothermal reduction method,and its Al doping is achieved through the thermal diffusion of Al elements in Al_(2)O_(3).The XRD and TEM test results show that the Al-doped nanobelts remain single-crystalline with excellent crystallinity.Furthermore,a single ultrawide Al-doped nanobelt is extracted to fabricate an MSM-type photodetector which is compared with that of the undoped nanobelt device.The test results indicate that the unintentionally dopedβ-Ga_(2)O_(3)nanobelt has a good response to 254 nm ultraviolet light with photocurrent of 1.5μA,while the re-sponse to 185 nm ultraviolet light is relatively weak with only 13 nA.Al doping has little effect on the dark current,but the current under 254 nm ultraviolet light is 31 nA,which is reduced to 2%of that of the undoped nanobelts.In contrast,the current of the Al-doped device under 185 nm ultraviolet light is 44 nA,which is 238%higher than that of the undoped device.This result is attributed to the lattice distortion caused by Al doping in nanobelt,which leads to an increase in the bandgap and a shift of the ultraviolet absorption peak towards shorter wavelength.This paper achieves the regulation of the photoelectric properties ofβ-Ga_(2)O_(3)nanobelts by Al doping,which could provide a useful reference for the research of Ga_(2)O_(3)single-crystal nanobelts in the field of photoelectricity.
作者
吴宗烜
陈海峰
胡志品
丁子杰
武晨露
WU Zongxuan;CHEN Haifeng;HU Zhipin;DING Zijie;WU Chenlu(School of Electronic Engineering,Xi'an University of Posts&Telecommunications,Xi'an,710121,CHN)
基金
陕西省自然科学基础研究计划资助项目(2023-JC-YB-574)。
