摘要
The transition metal trichalcogenides(TMTs)with quasi-one-dimensional(quasi-1D)layered crystal structure represent a unique platform to explore intriguing physical properties.Herein,we report the successful growth of a new TMT TiSe_(3)single crystal by using a high-pressure and high-temperature technique.The crystal structure of TiSe_(3)was determined by measuring the single-crystal x-ray diffraction and selected area electron diffraction.The 1D chain-like structure along the b-axis is formed by the TiSe_(6)prisms which share their tops and bottoms with each other.TiSe_(3)is a narrow band gap semiconductor with electron-type carriers under ambient conditions identified by the electrical and Hall effect measurements.It exhibits a pressure-induced semiconductor-to-metal transition around 4 GPa.As the pressure further increases to~6 GPa,a pressure-induced Lifshitz transition occurs,as indicated by the electrical transport measurements,high-pressure crystal structure characterizations,and electronic band structure calculations.
基金
the National Key R&D Program of China(Grant Nos.2023YFA1406100 and 2024YFA1400066)
the Open Research Fund of Beijing National Laboratory for Condensed Matter Physics(Grant No.2023BNLCMPKF002)
supported by the National Natural Science Foundation of China(Grant Nos.52288102 and 52090020)
the S&T Program of Hebei(Grant No.225A1102D)
the Open Projects from the State Key Laboratory of Metastable Materials Science and Technology,Yanshan University(Grant No.202301)
carried out at the Synergetic Extreme Condition User Facility(SE-CUF)of the Chinese Academy of Sciences
support from the Analytical Instrumentation Center(Grant No.SPST-AIC10112914)
School of Physical Science and Technology(SPST),ShanghaiTech University
supported by the Double First-Class Initiative Fund of ShanghaiTech University.
