摘要
在太赫兹频段通信系统中,高性能滤波器是实现信号选择性传输和抑制带外干扰的核心器件。然而,传统腔体滤波器设计方法只在低频段较为成熟,当工作频率提升至太赫兹频段时,则面临着高次模耦合效应显著、加工公差影响加剧以及插入损耗急剧增加等技术瓶颈,这些问题严重限制太赫兹通信系统的整体性能。文章基于CST Microwave Studio全波仿真平台,通过建立耦合理论模型,系统分析了腔体滤波器相关理论,设计出一种用于真空太赫兹系统的340 GHz腔体滤波器。仿真实验结果表明,所设计的滤波器在中心频率为340 GHz,频率范围为335~345GHz,通带插入损耗控制在1 dB以内,通带内的回波损耗优于20 dB。在355 GHz处带外抑制达到-25 dB,在320~325 GHz处达到-35 dB。该研究为太赫兹频段高性能滤波器的设计与实现提供了重要的理论指导和技术参考,对推进太赫兹通信系统的发展具有一定的工程应用价值。
In terahertz frequency band communication systems,high-performance filters are essential for enabling selective signal transmission and suppressing out-of-band interference.While traditional cavity filter design methods are well-established for low-frequency bands,they encounter significant challenges when extended to the terahertz range.At higher frequencies,issues such as strong high-order mode coupling effects,increased sensitivity to manufacturing tolerances,and sharply rising insertion losses present technical bottlenecks that severely limit overall system performance.This study utilizes the CST Microwave Studio full-wave simulation platform.By developing a coupled theoretical model,the underlying principles of cavity filter design were systematically analyzed,and a 340 GHz cavity filter for vacuum terahertz systems was designed.Simulation results indicate that the designed filter,centered at 340 GHz,achieves a passband from 335 to 345 GHz,with insertion loss maintained below 1 dB and return loss within the passband exceeding 20 dB.Out-of-band suppression reaches-25 dB at 355 GHz and-35 dB in the 320 to 325 GHz range.This research offers important theoretical insights and technical references for the design and realization of high-performance terahertz filters.It also holds engineering significance for advancing the development of terahertz communication systems.
作者
王荷
李勇滔
李含雁
马晓光
WANG He;LI Yongtao;LI Hanyan;MA Xiaoguang(School of Mechanical and Automotive Engineering,Guangxi University of Science and Technology,Liuzhou 545616,CHN;School of Automation,Guangxi University of Science and Technology,Liuzhou 545616,CHN)
出处
《半导体光电》
北大核心
2025年第4期652-658,共7页
Semiconductor Optoelectronics
基金
国家自然科学基金项目(62041402)
广西科技大学博士基金项目(24Z38)。
