摘要
针对红外探测器在空间应用中受高能粒子辐照导致性能衰退的问题,利用质子辐照实验,开展了位移损伤对HgCdTe红外焦平面关键参数影响的研究。通过对比辐照前后红外焦平面的性能变化,结合半导体辐射效应理论,分析了位移损伤对HgCdTe红外焦平面特性的影响机制。结果表明,HgCdTe红外焦平面经过质子辐照实验后,暗电流、噪声和盲元数量均有增大,且增幅随辐照注量的增加而增大。该工作可为深入开展HgCdTe红外探测器辐射损伤效应及损伤机理提供重要参考。
To address the issue of performance degradation in infrared detectors caused by high-energy particle irradiation in space applications,this study investigates the effects of displacement damage on key parameters of HgCdTe infrared focal plane arrays through proton irradiation experiments.By comparing the performance of the focal plane before and after irradiation and applying semiconductor radiation effect theory,the mechanisms by which displacement damage affects the characteristics of HgCdTe infrared focal planes are analyzed.The results indicate that proton irradiation leads to increased dark current,noise,and number of blind elements,with the extent of degradation proportional to the radiation fluence.These findings offer a helpful reference for future research on the radiation effects in HgCdTe infrared detectors.
作者
雷雨涵
王锦春
周东
王斌
李豫东
文林
郭旗
LEI Yuhan;WANG Jinchun;ZHOU Dong;WANG Bin;LI Yudong;WEN Lin;GUO Qi(Xinjiang Technical Institute of Physics and Chemistry,Chinese Academy of Sciences,Urumqi 830011,CHN;Aviation Key Laboratory of Science and Technology on Infrared Detector,Luoyang 471099,CHN;State Key Laboratory of Functional Materials and Devices for Special Environmental Conditions,Urumqi 830011,CHN;Xinjiang Key Laboratory of Extreme Environment Electronics,Urumqi 830011,CHN;University of Chinese Academy of Sciences,Beijing 100049,CHN)
出处
《半导体光电》
北大核心
2025年第4期597-601,共5页
Semiconductor Optoelectronics
基金
航空科学基金项目(ASFC-202200240Z8001)
新疆维吾尔自治区“天山英才”项目(2024TSYCCX0084)
中国科学院青年创新促进会项目(2021437)
中国科学院重点部署基础科研项目(JCPYJJ-22011)。
关键词
碲镉汞
红外焦平面
质子辐照
位移损伤
退火效应
HgCdTe
infrared focal plane array
proton radiation
displacement damage
annealing effect
