摘要
提出了一种二维非平衡非对称超结结构的比导通电阻基于JFET效应以及载流子碰撞电离积分的优化方法,既可缓解超结结构的JFET效应,又能确保n、p柱碰撞电离积分趋于一致,从而最大程度地改善该结构的比导通电阻。利用雪崩击穿和临界耗尽的约束条件,基于MATLAB数值计算提出了比导通电阻及其设计参数的优化理论。理论结果表明,当击穿电压为650 V、深宽比为10时,非平衡对称结构的比导通电阻比平衡对称结构改进了16.1%。进一步,非平衡非对称结构当其n柱/p柱宽度比k分别为0.5、1和2时,其比导通电阻比非平衡对称结构分别改进了7.5%、11.0%和7.2%。MEDICI仿真结果与MATLAB理论计算的相对误差小于2%,验证了所提出优化理论的可行性。
In this study,we propose an optimization method for the specific on-resistance of two-dimensional superjunction based on the JFET effect and carrier impact ionization integral.The proposed method can alleviate the JFET effect of the superjunction and converge impact ionization integrals n and p regions,thereby maximizing the specific on-resistance.We perform MATLAB numerical calculations to determine the specific on-resistance and its design parameters.The results demonstrate that when breakdown voltage is 650 V and aspect ratio is 10,the specific on-resistance of the balanced asymmetric structure is improved by 16.1%over the balanced symmetric structure.Furthermore,the specific on-resistance of the imbalanced asymmetric structure is improved by a maximum of 11.0%over that of the asymmetric balanced structure for a specific k,the width ratio of n-pillar and p-pillar.The relative error between the MEDICI simulation results and the MATLAB theoretical calculations is less than 2%,which demonstrates the feasibility of the optimization theory.
作者
金正昊
杜天行
裴鸿基
李汶骏
黄海猛
蒋兴莉
孟繁新
易波
程骏骥
杨洪强
JIN Zhenghao;DU Tianxing;PEI Hongji;LI Wenjun;HUANG Haimeng;JIANG Xingli;MENG Fanxin;YI Bo;CHENG Junji;YANG Hongqiang(State Key Lab.of Elec.Thin Films and Integr.Dev.,UESTC,Chengdu 610054,P.R.China;University of Delaware,DE Newark 19716,USA;Chengdu Semi-Future Technology Co.,Ltd,Chengdu 610000,P.R.China;Chengdu High-Tech Development CO.,LTD,Chengdu,610093,P.R.China)
出处
《微电子学》
北大核心
2025年第2期315-320,共6页
Microelectronics
基金
广东省基础与应用基础研究基金项目(2021A1515011720)
电子科技大学电子薄膜与集成器件国家重点实验室开放课题资助(KFJJ202106)。
关键词
超结
比导通电阻
击穿电压
深宽比
JFET效应
碰撞电离积分
superjunction
specific on-resistance
breakdown voltage
aspect ratio
JFET effect
impact ionization integral
