摘要
全息光刻作为一种高效率的微纳加工方法,在3维微纳结构制造领域引起了广泛的研究兴趣。为了分析3维微纳结构的形貌演变并研究曝光系统设计对所制备结构的影响,基于全息光刻原理,建立了光刻胶内的3维曝光剂量模型,并进一步建立了3维微纳结构的形貌演化模型;基于上述数值模型进行了理论分析,探索了光源偏振、曝光基底反射、入射光相位漂移等关键因素对曝光场对比度的影响。结果表明,在经典反射式全息光刻系统中,横向电波-横向电波(TETE)偏振入射光在不同入射角下表现出高对比度(0.95以上),明显优于其它偏振组合;曝光基底反射率对基底法线方向对比度具有重要影响并且二者正相关;大幅值低频相位漂移的入射光将导致曝光场对比度明显下降,因此曝光系统应主动控制环境和系统自身扰动,以获得高对比度的曝光场。该研究为反射式全息光刻系统的参数优化设计提供了参考。
Holographic lithography has garnered significant research attention in the production of 3-D micro/nano structures due to its high efficiency.To delve deeper into the morphological changes within these 3-D structures and evaluate the impact of exposure system design on production,a comprehensive exposure dose model within the photoresist was developed,rooted in holographic lithography principles.Additionally,a morphology evolution model for 3-D micro-nano structures was formulated.By utilizing these established models,theoretical analysis was conducted to investigated key variables influencing the contrast of the exposure field,including light source polarization,exposure substrate reflection,and incident light phase drift.Simulation results indicate that,within the classical reflective holographic lithography system,the transverse electric and transverse electric(TE-TE)polarized incident light exhibits superior contrast(above 0.95)across various incident angles,surpassing other polarization combinations significantly.Moreover,the reflectivity of the exposure substrate significantly influences contrast in the substrate’s normal direction,showing a positive correlation.Importantly,significant and low-frequency drifts in the incident light’s relative phase result in a notable decrease in exposure field contrast.Thus,actively mitigating environmental and internal disturbances is crucial for maintaining a high-contrast exposure field.This study provides a reference for the parameter optimization design of reflective holographic lithography systems.
作者
赵家琦
胡飞
郭登极
张贤鹏
王序进
ZHAO Jiaqi;HU Fei;GUO Dengji;ZHANG Xianpeng;WANG Xujin(College of Physics and Optoelectronic Engineering,Shenzhen University,Shenzhen 518060,China;Appotronics Corporation Ltd.,Shenzhen 518054,China;Institute of Semiconductor Manufacturing Research,Shenzhen University,Shenzhen 518060,China)
出处
《激光技术》
北大核心
2025年第4期532-538,共7页
Laser Technology
基金
国家重点研发计划资助项目(2021YFB3600300)。
关键词
光学制造
全息光刻
光束干涉
微纳结构
对比度
optical fabrication
holographic lithography
beam interference
micro/nano structures
contrast ratio
