摘要
Indium nitride(InN)is regarded for its excellent electronic transport properties and broad spectral absorption;however,its photoelectrochemical(PEC)efficiency is hindered by high charge recombination rates and sluggish water oxidation kinetics.Herein,reduced graphene oxide(rGO)has been introduced as an interfacial layer to address these challenges within the InN heterojunction.The incorporation of rGO reduces the impedance at the InN/PM6 interface,significantly enhancing charge separation.This modification shifts the energy band modulation from a Z-scheme to a type-Ⅱconfiguration,accelerating the kinetics of oxygen evolution reaction(OER),as further supported by theoretical calculations.The heterojunction photoanode exhibits a remarkable 22-fold increase in photocurrent density and an astonishing 50-fold enhancement in applied bias photonto-current efficiency(ABPE)compared to pure InN.Additionally,the enhanced photoanode demonstrates outstanding longterm stability in alkaline environments,with hydrogen and oxygen production rates reaching 2.56 and 1.28μmol/min,respectively.This work highlights the transformative potential of rGO in modulating energy band structure,extending its application across a wide range of systems and underscoring its significant promise for advancing artificial photosynthesis technologies.
基金
supported by the National Key Research and Development Program of China(2022YFB3604500,2022YFB3604501)
the Fundamental Research Funds for the Central Universities(D2230320)。
