摘要
金属卤化物钙钛矿因其优异光电特性成为研究热点。采用高温化学气相沉积法制备了CsPbBr_(3)单晶,通过气相离子交换技术成功合成不同卤素比例的CsPbBr_(3-n)X_(n)(X=Cl或I)纳15-315米线。缺陷密度分析显示,Cl掺杂使缺陷密度从1.11×10^(15) cm^(-3)增至~2.32×10^(15) cm^(-3),I掺杂体系缺陷亦有显著增加。光电测试表明:在405nm波长激光(2.5mW)照射下,Cl掺杂器件最大电流随交换深度增加从~150nA降至~100pA,而I掺杂器件电流稳定在50nA左右。研究揭示卤素调控可显著改变材料缺陷态与载流子输运特性,其中Cl掺杂体系对交换深度敏感度更高。该成果验证了离子交换技术对钙钛矿材料光电特性的可控调节能力,为开发组分可调的新型光电子器件提供了重要技术路径。
Metal halide perovskites have become a research hotspot due to their excellent optoelectronic properties.CsPbBr_(3) single crystals were prepared by the high-temperature chemical vapor deposition method,and CsPbBr_(3-n)Xn(X=Cl or I)nanowires with different halogen ratios were successfully synthesized by the gas-phase ion exchange technology.Defect density analysis shows that Cl doping increases the defect density from 1.11×10^(15) cm^(-3) to~2.32×10^(15) cm^(-3),and the defects in the I doped system significant increase.Optoelectronic testing shows that under the irradiation of a 405 nm wavelength laser(2.5 mW),the maximum current of Cl doped devices decreases from~150 nA to~100 pA with the increase of exchange depth,while the current of I doped devices remains stable at around 50 nA.The research reveals that halogen modulation can significantly change the defect states and carrier transport characteristics of materials,with Cl doped systems showing higher sensitivity to exchange depth.This achievement verifies the controllable regulation ability of ion exchange technology on the optoelectronic properties of perovskite materials,providing an important technical path for the development of new optoelectronic devices with adjustable components.
作者
杨驰
李建良
杨一鸣
Yang Chi;Li Jianliang;Yang Yiming(School of Integrated Circuits,Dalian University of Technology,Dalian 116600,China)
出处
《微纳电子技术》
2025年第8期84-93,共10页
Micronanoelectronic Technology
