摘要
增强型(E-mode)氮化镓(GaN),即E-GaN器件因开关速度快、导通损耗小以及无反向恢复的特点,逐渐成为实现高开关频率逆变电源的理想选择。本文结合E-GaN的驱动特性,给出了驱动芯片选择及驱动电路设计的依据及建议,分析高频全桥逆变器中E-GaN器件的应用优势。考虑实际数字化控制分析并建立了数字化单相逆变电路的数学模型,并根据此模型对控制器参数进行了系统性设计。500 W E-GaN样机实验结果显示,在100 kHz的开关频率下,整机输出特性良好。
The fast switching speed,low conduction loss,and no reverse recovery of E-mode GaN(E-GaN)devices have gradually become the ideal choice for achieving high switching frequency inverters.This paper provides the basis and suggestions for selecting driving chips and designing driving circuits based on the driving characteristics of E-GaN,and analyzes the application advantages of E-GaN devices in high-frequency full-bridge inverters.Considering the actual digi-tal control,the mathematical model of digital single-phase inverter circuit is analyzed,and the controller parameters are designed systematically.The experimental results of the 500 W E-GaN prototype show that the overall output characteris-tics are good at a switching frequency of 100 kHz.
作者
安少亮
王可嘉
汪航
杨帆
An Shaoiang;Wang Kejia;Wang Hang;Yang Fan(School of Electrical Engineering,Xi’an University of Technology,Xi’an 710048,China;College of Automation&College of Artificial Intelligence,Nanjing University of Posts and Telecommunications,Nanjing China)
出处
《电力电子技术》
2025年第8期112-116,共5页
Power Electronics
基金
国家自然科学基金(52207207)。
关键词
逆变电源
数字化控制
高频
inverter power supply
digital control
high-frequency
