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基于中压混合器件的ANPC母排绝缘与寄生参数优化设计

Optimization design of insulation and parasitic parameters for medium-voltage hybrid ANPC busbars
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摘要 母排作为电力电子变换器中的关键功率传输部件,承担着连接功率器件、电容及端子的重要功能。为降低寄生参数与器件应力,换流回路须通过母排连接。文中以15 kV碳化硅金属氧化物半导体场效应晶体管(SiC metal oxide semiconductor field effect transistor,SiC MOSFET)与串联硅基绝缘栅双极晶体管(Si insulate-gate bipolar transistor,Si IGBT)组成的有源中点钳位型(active neutral-point clamped,ANPC)变换器拓扑为核心研究对象,针对母排的器件布局、叠层顺序及端子位置等关键要素展开优化设计。基于有限元仿真软件,建立母排的有限元仿真模型,通过参数化分析优化铜层间距与叠层结构,提出适用于高压印制电路板(printed circuit board,PCB)母排的绝缘优化策略。仿真及实验结果表明,优化母排设计可有效改善系统寄生参数分布,文中验证了其在高压应用场景下的电场分布。与传统设计方案相比,优化后的母排结构在关键节点绝缘性能与整体可靠性方面具有显著优势。 The busbar,serving as a critical power transmission component in power electronic converters,fulfills essential functions including interconnection of power devices,capacitors,terminals,and insulation.To mitigate parasitic parameters and device stresses,converter circuits must be integrated through busbars.This paper focuses on the ANPC topology composed of a 15 kV SiC metal oxide semiconductor field effect transistor(SiC MOSFET)and a series-connected 6.5 kV Si insulated gate bipolar transistor(Si IGBT),investigating optimized busbar design through dimensional arrangement,layer stacking sequence,and terminal positioning.A three-dimensional electromagnetic model of medium-voltage multi-device integrated busbars is established using finite element simulation software.Parametric analysis is conducted to optimize device spacing and layer structures,proposing a busbar layout strategy tailored for hybrid ANPC topologies.Simulation results demonstrate that the.optimized design effectively reduces system parasitic while validating reasonable electric field distribution under high-frequency switching conditions.Experimental tests on a prototype platform confirm that the optimized busbar exhibits superior insulation performance at critical nodes and enhanced overall reliability compared to conventional designs.
作者 赵一平 董晓博 靳浩源 王淦 王来利 张虹 ZHAO Yiping;DONG Xiaobo;JIN Haoyuan;WANG Gan;WANG Laili;ZHANG Hong(Xi'an Jiaotong University(State Key Laboratory of Electrical Insulation and Power Equipment),Xi'an 710049,China)
出处 《电力工程技术》 北大核心 2025年第4期52-61,共10页 Electric Power Engineering Technology
基金 国家重点研发计划资助项目“配电网高功率密度柔性互联技术和装备”(2023YFB2407400)。
关键词 中压变换器 叠层母排 有限元仿真 寄生参数 绝缘 碳化硅金属氧化物半导体场效应晶体管(SiC MOSFET) medium-voltage converter laminated busbar finite element simulation parasitic parameters insulation SiC metal oxide semiconductor field effect transistor(SiC MOSFET)
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