摘要
氮化铝(AlN)作为第三代半导体材料的代表之一,已经在多个应用领域引起了广泛关注。然而,本征AlN的压电性能不足以满足能量采集器、表面声波谐振器和体声波谐振器等微机电系统(MEMS)中压电器件的需求。重点探讨钪(Sc)掺杂氮化铝生成压电增强材料AlScN的效果及其机理。目前,制备AlScN压电薄膜的方法主要包括磁控溅射(PVD)、分子束外延(MBE)和有机金属气相沉积(MOCVD)。为了实现优异的压电性能,AlScN薄膜需要具备高压电性能、良好的c轴取向生长和优异的结晶性。目前的研究主要集中在调节Sc掺杂浓度、生长温度、Ⅲ/Ⅴ比及衬底材料等方面,以提升AlScN薄膜的整体性能。相比之下,作为掺杂元素的钇(Y)和镱(Yb)展现出更大的应用潜力。它们不仅能够实现更高的掺杂浓度(理论上分别可达0.75和0.77),而且成本较Sc更低。这使得Y和Yb在未来压电器件中的应用前景更加广阔,为提高AlN的压电性能提供了新的研究方向。
As one of the representatives of the third-generation semiconductor materials,aluminum nitride(AlN)has attracted extensive attention in multiple application fields.However,the piezoelectric properties of intrinsic AlN are insufficient to meet the requirements of piezoelectric devices in microelectromechanical systems(MEMS),such as energy harvesters,surface acoustic wave resonators,and bulk acoustic wave resonators.This paper focuses on the effect and mechanism of scandium(Sc)doping in aluminum nitride to generate the piezoelectric enhancement material AlScN.Currently,the main methods for preparing AlScN piezoelectric thin films include magnetron sputtering(PVD),molecular beam epitaxy(MBE),and metalorganic chemical vapor deposition(MOCVD).In order to achieve excellent piezoelectric properties,AlScN thin films need to possess high piezoelectric performance,good c-axis oriented growth,and excellent crystallinity.Current research mainly concentrates on adjusting the Sc doping concentration,growth temperature,Ⅲ/Ⅴ ratio,and substrate materials to enhance the overall performance of AlScN thin films.In contrast,yttrium(Y)and ytterbium(Yb)as doping elements show greater application potential.They can not only achieve higher doping concentrations(theoretically up to 0.75 and 0.77 respectively)but also have lower costs compared to Sc.This makes the application prospects of Y and Yb in future piezoelectric devices broader,providing a new research direction for improving the piezoelectric properties of AlN.
作者
朱焕能
吴进
王强
ZHU Huanneng;WU Jin;WANG Qiang(School of Aeronautics,Chongqing Jiaotong University,Chongqing 400074,China;Laboratory of Microwave and Vacuum Technology,Jihua Laboratory,Foshan 528200,China)
出处
《功能材料》
北大核心
2025年第7期7035-7043,共9页
Journal of Functional Materials
基金
重庆市科技局面上项目(CSTB2022NSCQ-MSX0495)
重庆市研究生科研与创新计划项目(CYS240525)。
关键词
氮化铝
掺杂
压电系数
相分离
结晶性
aluminum nitride
doping
piezoelectric coefficient
phase separation
crystallinity
