摘要
We have investigated homoepitaxy of Al N films grown by molecular beam epitaxy(MBE)on Al N/sapphire templates.The MBE epitaxy of Al N at the low temperature range,which is suitable for Al Ga N,encounters significant challenge in preventing Al droplet and pits,since the migration and desorption rate of Al atom are very low.In contrast,by elevating the growth temperature,such a difficulty can be effectively overcome,and we were able to grow Al N films with much improved surface morphology and obtained step flow growth mode without any Al droplets and pits.The cathodoluminescence spectroscopy indicate that the impurity incorporation and defect generation in the Al N epilayers was suppressed by elevating the growth temperature.A systematic investigation on the influence of Al beam flux and growth temperature in a very wide range on the Al N films has been conducted,and a comprehensive growth diagram of MBE Al N has been obtained.
基金
Project supported by the Innovation Program for Quantum Science and Technology(Grant No.2021ZD0303400)
the National Key Research and Development Program of China(Grant Nos.2022YFB3605602 and 2024YFE0205000)
the Natural Science Foundation of Jiangsu Province,China(Grant No.BK20243037)
the Jiangsu Special Professorship,Collaborative Innovation Center of Solid-state Lighting and Energy-saving Electronics,Postdoctoral Fellowship Program of CPSF(Grant No.GZC20231098)。
