摘要
Two-dimensional(2D)MoTe_(2) shows great potential for future semiconductor devices,but the lab-to-fab transition is still in its preliminary stage due to the constraints in the crystal growth level.Currently,the chemical vapor deposition growth of 2D MoTe_(2) primarily relies on the tellurization process of Mo-source precursor(MSP).However,the target product 2H-MoTe_(2) from Mo precursor suffers from long growth time and suboptimal crystal quality,and MoO_(x) precursor confronts the dilemma of unclear growth mechanism and inconsistent growth products.Here,we developed magnetron-sputtered MoO_(3) film for fast and high-mobility 2H-MoTe_(2) growth.The solid-to-solid phase transition growth mechanism of 2D MoTe_(2) from Mo and MoO_(x) precursor was first experimentally unified,and the effect mechanism of MSPs on 2D MoTe_(2) growth was systematically elucidated.Compared with Mo and MoO2,the MoO_(3) precursor has the least Mo-unit lattice deformation and exhibits the optimal crystal quality of growth products.Meanwhile,the lowest Gibbs free energy change of the chemical reaction results in an impressive 2HMoTe_(2) growth rate of 8.07 mm/min.The constructed 2H-MoTe_(2) field-effect transistor array from MoO_(3) precursor showcases record-high hole mobility of 85 cm^(2)·V^(-1)·s^(-1),competitive on-off ratio of 3×10^(4),and outstanding uniformity.This scalable method not only offers efficiency but also aligns with industry standards,making it a promising guideline for diverse 2D material preparation towards real-world applications.
基金
supported by the National Natural Science Foundation of China(Grant Nos.51991340,51991342,52225206,92163205,52188101,62322402,52350301,62204012,52250398,52303362,62304019)
the National Key Research and Development Program of China(Grant No.2022YFA1203800,2022YFA1203803,2018YFA0703503,2023YFF1500400,2023YFF1500401)
the Overseas Expertise Introduction Projects for Discipline Innovation(Grant No.B14003)
the Frontier Cross Research Project of the Department of Chinese Academy of Sciences(Grant No.XK2023JSA001)
the Beijing Nova Program(Grant No.20220484145,20230484478)
the Young Elite Scientists sponsorship program by CAST(Grant No.2022QNRC001)
the Fundamental Research Funds for the Central Universities(Grant No.FRF-06500207,FRF-TP-22-004C2,FRF-06500207,FRF-TP-22-004A1,FRF-IDRY-22-016)
the State Key Lab for Advanced Metals andMaterials (No. 2023-Z05)
Postdoctoral Fellowship Program of CPSF(GZC20230233)
the Special support from the PostdoctoralScience Foundation (2023TQ0007).
