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基于滤波网络综合的宽带功率放大器设计

Design of a Broadband Power Amplifier Based on Filter Network Synthesis
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摘要 提出了一种滤波匹配网络的功率放大器设计方法。该方法将高阶匹配网络转换为具有晶体管寄生输出电容和寄生封装电感的低阶无源匹配网络,从而实现了更加紧凑的面积。为了验证所提出设计方法的可行性,设计了一款超宽带横向扩散金属氧化物半导体功率放大器进行验证。测试结果:在300 MHz~900 MHz范围内,其输出功率在49.3 dBm~50.9 dBm之间,漏极效率为50%~68%。此外,利用W-CDMA信号对电路进行了线性度指标测试:在44 dBm的输出功率下,整个带宽的邻信道功率比值低于-43 dBc,在48 dBm的输出功率下,其仍然能够维持在-30 dBc左右。实验结果表明,所提出的网络综合方法在超宽带功率放大器的设计中能够很好地满足各项性能指标,因此用于宽带设计具有一定优势。 A power amplifier design method for filtered matching networks is proposed.The method converts the high-order matching network into a low-order passive matching network with transistor parasitic output capacitance and parasitic package inductance,resulting in a more compact area.An ultra-wideband laterally diffused metal oxide semiconductor power amplifier is made to validate the proposed design process and confirm its viability.The test findings show that its drain efficiency is from 50%to 68%and that its output power ranges from 49.3 dBm to 50.9 dBm in the range of 300 MHz~900 MHz.Additionally,W-CDMA signals are used to test the circuit′s linearity index.The adjacent channel power ratio value for the entire bandwidth is below-43 dBc at 44 dBm output power,and it is still able to sustain about-30 dBc at 48 dBm output power.The experimental results demonstrate that the suggested network synthesis approach may satisfactorily achieve the performance indices in the design of an ultra-wideband power amplifier,resulting in a number of benefits in wideband design.
作者 姚小江 周图镔 丛密芳 YAO Xiaojiang;ZHOU Tubin;CONG Mifang(School of Integrated Circuit Science and Engineering,Nanjing University of Posts and Telecommunications,Nanjing 210023,China;Zhenjiang Research Institute,Nanjing University of Posts and Telecommunications,Zhenjiang 212002,China;Institute of Microelectronics of Chinese Academy of Science,Beijing 100029,China)
出处 《微波学报》 北大核心 2025年第3期45-48,56,共5页 Journal of Microwaves
基金 南京邮电大学引进人才科研启动基金项目(NY219009)。
关键词 功率放大器 超宽带 滤波网络 横向扩散金属氧化物半导体 power amplifier ultra-broadband filter network laterally diffused metal oxide semiconductor
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