期刊文献+

中/长波双色Ⅱ类超晶格红外焦平面器件退火技术研究

Study on Annealing Technology of Mid-/Long-Wavelength Two-Color Type-II Superlattice Infrared Focal Plane Device
在线阅读 下载PDF
导出
摘要 双色探测器相较于单色探测器具有更高的探测精度,是第三代红外探测器中的典型代表。Ⅱ类超晶格具有宽吸收光谱、高均匀性等突出优点,可用于制备双色探测器。退火技术则可通过提高侧壁钝化质量以及材料与电极接触质量来改善双色Ⅱ类超晶格器件性能。通过对器件进行一系列不同温度的退火实验,就退火对中/长波双色Ⅱ类超晶格红外焦平面器件性能的影响进行分析研究。通过优化退火工艺,pnp结构器件的长波对应阻抗可提高4.6倍,npn结构器件的长波对应阻抗可提高31%。相比于通过优化材料结构和器件结构来提升器件性能,退火具有高效、简便等突出优点。该研究对中/长波双色Ⅱ类超晶格红外焦平面器件的性能提升具有一定的参考意义。 Compared with the monochromatic detector,the two-color detector has higher detection accuracy and is the typical representative of third-generation infrared detectors.Type-II superlattice has outstanding advantages such as wide absorption spectrum and high uniformity,and can be used to prepare two-color detectors.Annealing technology can improve the performance of two-color type-II superlattice devices by improving the quality of sidewall passivation and the quality of contact between materials and electrodes.By conducting a series of annealing experiments at different temperatures on the device,the effect of annealing on the performance of mid-/long wavelength two-color type-II superlattice infrared focal plane devices is analyzed and studied.By optimizing the annealing process,the long-wavelength corresponding impedance of the pnp structure device can be increased by 4.6 times,and the long-wavelength corresponding impedance of the npn structure device can be increased by 31%.Compared with improving device performance by optimizing material structure and device structure,annealing has outstanding advantages such as high efficiency and simplicity.This study has certain reference significance for the performance improvement of mid-/long-wavelength two-color type-1I superlattice infrared focal plane devices.
作者 李景峰 刘铭 张金钰 付伟 LI Jing-feng;LIU Ming;ZHANG Jin-yu;FU Wei(North China Research Institute of Electro-Optics,Beijing 100015,China)
出处 《红外》 2025年第6期10-14,共5页 Infrared
关键词 Ⅱ类超晶格 退火技术 红外探测器 type-II superlattice annealing technology infrared detector
  • 相关文献

参考文献8

二级参考文献48

  • 1Tidrow M Z. New infrared sensors for ballistic missile defense. Proc of SPIE, 2005, 5732:217-224.
  • 2Smith D L, Mailhiot G. Proposal for strained type II superlattice infrared photodetector. J Appl Phys, 1987, 62:2545-2548.
  • 3Youngdale E R, Meyer J R, Hoffman C A, et al. Auger lifetime enhancement in InAs/GaInSb superlattices. Appl Phys Lett, 1994, 64(23): 3160-3162.
  • 4Tuttle G, Kroemer H, English J H. Effects of interface layersequencing on the transport properties of InAs/A1Sb quantum wells: Evidence for antisite donors at the InAs/A1Sb interface. J Appl Phys, 1990, 67(6): 3032-3037.
  • 5Herres N, Fuchs F, Schmitz J, et al. Effect of interfacial bondingon the structural and vibrational properties of InAs/GaSb superlattiees. Phys Rev B, 1996, 53(23): 15688-15705.
  • 6Booker G R, Klipstein P C, Lakrimi M, et al. Growth of InAs/GaSb source strained layer superlattices. II. J Cryst Growth, 1995, 146: 495-502.
  • 7Lew A Y, Zuo S L, Yu E T, et al. Anisotropy and growth-sequence dependence of atomic-scale interface structure in InAs/Gal_InxSb superlattices. Appl Phys Lett, 1997, 70:75-77.
  • 8Kaspi R, Steinshnider J, Weimer M, et al. As soak control of the InAs-on-GaSb interface. J Cryst Growth, 2001, 225:544-549.
  • 9Zhang Y H, Ma W Q, Wei Y, et al. Narrow-band long-/very-long wavelength two-color type-II InAs/GaSb superlattice photodetector by changing the bias polarity. Appl Phys Lett, 2012, 100:173511.
  • 10Tuttle G, Kroemer H, English J H. Effects of interface layer sequencing on the transport properties of InAs/A1Sb quantum wells: Evidence for antisite donors at the InAs/A1Sb interface. J Appl Phys, 1990, 67:3032-3037.

共引文献21

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部