摘要
人工智能等新兴技术的快速发展,使得基于“冯·诺依曼”架构的传统计算机面临高能耗和低计算效率的挑战,无法满足当前更高效、快速的应用需求。类似于人脑的神经形态计算体系因其可实现“运算-存储”一体化,是实现大规模高密度并行运算的重要途径之一。而基于忆阻器原理模拟生物突触功能的类脑人工突触器件可以为类脑计算提供硬件支持。近年来,二维材料逐渐被用作类脑人工突触的候选材料,其中,过渡金属硫族化合物由于其与层数相关的带隙特征、高载流子迁移率和栅压调控的光电特性等被广泛应用于对生物突触可塑性功能的模拟。因此,该文设计了基于过渡金属硫族化合物晶体管的类脑人工突触创新实验。基于二硒化钨材料,采用等离子体处理二氧化硅/硅衬底表面引入界面态用以制备类脑人工突触晶体管器件。通过调控栅压极性,实现器件高低阻态转换,并且通过调节等离子体处理时间来调控生物突触可塑性功能。该实验囊括了器件制备及表征和测试等手段,并且将科研与实践教学相融合,不仅可以激发学生的兴趣,还有助于培养学生的创新实践能力。
[Objective]The development of emerging technologies,particularly artificial intelligence,has posed significant challenges to traditional computers based on the conventional“von Neumann”architecture,which suffer from high energy consumption and low computing efficiency,making them inadequate for increasingly demanding applications.Neuromorphic computing systems,inspired by the human brain,have emerged as a promising alternative for large-scale,high-density parallel computing owing to their integrated“operation-storage”capability.Brain-like artificial synapses,based on the principles of memristors,are designed to simulate the biological synaptic functions of neurons and provide essential support for neuromorphic computing.In recent years,2D materials have emerged as promising candidates for brain-like artificial synapses.Among them,transition metal dichalcogenides(TMDs)have been widely used for simulating biological synaptic plasticity owing to their layer-dependent bandgap characteristics,high carrier mobility,and gate voltage-controlled optoelectronic properties.[Methods]In this paper,we present innovative experiments on brain-like artificial synapse devices based on three-terminal transistors using TMDs.Single-layer or few-layer WSe_(2) microflakes of varying thicknesses were obtained through mechanical exfoliation,while oxygen plasma treatment was applied to the SiO2/Si substrate surface to enable interfacial state tuning.The dry transfer technique was then applied to fabricate brain-like artificial synapse devices based on WSe_(2) materials,followed by an annealing process at 300℃under an argon gas atmosphere.Optical and scanning electron microscopy were employed to characterize the morphology and thickness of the WSe_(2) material.To analyze the electrical properties of the devices,the transfer and I–V output curves were measured.The post-synaptic current(PSC)as a function of pulse number was evaluated under two conditions:50 continuous cycles of a 50 V pulse and 50 cycles of a-10 V/-50 V pulse.Both measurements were conducted under the same test conditions,with a source-drain voltage of 3 V,a pulse duration of 30 ms,and a pulse period of 60 ms to assess the stability of the artificial synapse devices.Furthermore,the biological synaptic plasticity of the artificial synapse devices can be tuned by varying the duration of oxygen plasma treatment(10 s,60 s,120 s,and 180 s)on the surface of the SiO2/Si substrate,thereby modifying the interfacial state density.[Results]The results demonstrated that by controlling the gate voltage polarity,a transition from high-resistance states to low-resistance states can be achieved.The PSC at 0 V gate voltage after the application of a 50 V gate voltage pulse was greater than that observed after the application of a-10 V gate voltage pulse.Under a 50 V gate voltage,the device entered a low-resistance state,whereas under a-10 V gate voltage,the device remained in a high-resistance state,successfully enabling switching between high-and low-resistance states.During the long-term potentiation phase,the PSC of devices subjected to different plasma treatment durations continuously increases with the number of pulses.Moreover,as the number of pulses increases,the PSC exhibits a gradual saturation trend,which becomes more pronounced with longer treatment times.In contrast,during the long-term depression phase,the PSC decreases as the number of pulses increases,highlighting the effect of plasma treatment duration on biological synaptic function.[Conclusions]This paper presents an innovative experiment on brain-inspired artificial synapses based on transition metal dichalcogenide tungsten diselenide(WSe_(2))transistors.The study encompasses device fabrication,characterization,and property measurement,integrating research with practical teaching.This approach not only fosters students’interest but also helps cultivate their creativity and problem-solving abilities.
作者
王海珍
任俊文
李德慧
WANG Haizhen;REN Junwen;LI Dehui(School of Integrated Circuits,Huazhong University of Science and Technology,Wuhan 430074,China;Wuhan National Laboratory for Optoelectronics,School of Optical and Electronic Information,Huazhong University of Science and Technology,Wuhan 430074,China)
出处
《实验技术与管理》
北大核心
2025年第5期36-44,共9页
Experimental Technology and Management
基金
国家自然科学项目面上项目(62074064)
华中科技大学实验技术研究项目面上项目(校技改2023-16,2025-2-38)。
关键词
二维材料
二硒化钨
界面态
类脑人工突触
two-dimensional materials
WSe_(2)
interfacial states
brain-like artificial synapses
