摘要
ZnIn_(2)S_(4), a typical n-type semiconductor, has received intensive attention due to its suitable bandgap, excellent visible light absorption performance, and simple and fiexible preparation methods. However, its application is curbed by photo-generated carrier recombination and photo corrosion. Although constructing S-scheme heterojunctions by combining ZnIn_(2)S_(4)with other semiconductors can solve these problems, the photocatalytic activity of S-scheme heterojunctions can be further improved. Therefore, this short review summarizes modification strategies of ZnIn_(2)S_(4)-based S-scheme heterojunctions. This article also introduces the concept, design principles, and characterization methods of ZnIn_(2)S_(4)-based S-scheme heterojunction. Finally, current challenges and future research focuses related to ZnIn_(2)S_(4)-based S-scheme heterojunctions are discussed and summarized, including the utilization of advanced in-situ characterization techniques to further illuminate the photocatalytic mechanism, the DFT-assisted design of catalysts to increase the selectivity of products during photocatalytic CO_(2) reduction, and extending the photoresponse of ZnIn_(2)S_(4)-based S-scheme heterojunction to near-infrared range, etc.
基金
the Strategic Priority Research Program of the Chinese Academy of Sciences, China (Nos. XDA23010300 and XDA23010000)
the National Natural Science Foundation of China (Nos. 51878644 and 41573138)。
