摘要
在陶瓷电容器中,陶瓷介质、金属电极与封装材料交汇处形成的三相点区域常因材料介电常数的差异产生电场集中现象,显著增加沿面闪络的风险,进而引发电容器的绝缘性能失效。为解决此问题,提出调节封装材料电导率的方法,采用高压半导化复合材料封装电容器,利用COMSOL有限元软件构建电容器双层结构与三明治结构两种物理模型,研究封装模型和高压半导化复合材料电导率对三相点区域电场、场增强因子以及最大电场降低幅度的影响。结果表明:三明治结构模型优于双层结构模型,且高压半导化复合材料距离陶瓷上电极为0.3 mm,宽度为2 mm,厚度为0.5 mm时,三相点区域电场和场增强因子最低,最大电场降低幅度最大。相较于高电阻封装材料,高压半导化复合材料可使三相点区域最大电场降低68.61%,能有效疏散三相点区域积聚的电荷。
In ceramic capacitors,the triple junction region at the interaction of ceramic medium,metal electrode,and packaging material often produces concentrated electrical field due to the differences in dielectric constant of the materials,which significantly increases the risk of surface flashover and then lead to failure of the insulation of the capacitors.To address this problem,high-voltage semiconducting composite materials with adjustable conductivity were utilized to package the ceramic capacitors.Double-layer and sandwich structures models were constructed using COMSOL software,and the effect of encapsulation model and conductivity of composite material was investigated on the electric field on the triple junction region.Results show that the sandwich structure is superior to the double-layer structure.When the distance is 0.3 mm between the electrode and the high-voltage semiconducting composite material(width of 2 mm,thickness of 0.5 mm),the ceramic exhibits an outstanding stability with largest reduced electric field.Compared with the high-resistance packaging materials,the high voltage semiconducting composite materials can reduce the maximum electric field at the triple junction by 68.61%,and can effectively disperse the accumulated charge in the triple junction region.
作者
田恒
路彭振
吴业林
赵嘉阳
田晶晶
TIAN Heng;LU Pengzhen;WU Yelin;ZHAO Jiayang;TIAN Jingjing(School of Physics and Electronic Information Engineering,Henan Polytechnic University,Jiaozuo 454003,Henan Province,China)
出处
《电子元件与材料》
北大核心
2025年第2期192-200,共9页
Electronic Components And Materials
基金
河南省自然科学基金(242300420686)
河南理工大学青年探索基金(NSFRF240326)。
关键词
陶瓷电容器
三相点
电场
场增强因子
ceramic capacitors
triple junctions
electric field
field enhancement factor
