摘要
针对常规武器弹药的外弹道信息测量过程中,低量程MEMS加速度传感器在上万g_(n)过载环境下的损坏问题,本文提出了一种双轴抗冲击微加速度传感器,可以实现抗过载3×10^(4)g_(n)量程50 g_(n)的指标要求。有限元仿真结果表明:在50 g_(n)载荷作用下,加速度计敏感单元在Y轴位移为1.476μm,灵敏度为0.730 pF/g_(n),在X轴位移为1.476μm,灵敏度为0.382 pF/g_(n)引入嵌入式双轴叉齿止挡缓冲结构的加速度传感器,在3×10^(4)g_(n)过载作用X轴下的梳齿最大位移为3.129μm,Y轴下的梳齿最大位移为3.042μm,均小于最小梳齿间距4μm,有效避免了短路。最大等效应力X轴,Y轴分别为180.880 MPa和85.136 MPa,均远小于硅(Si)的许用应力。
Aiming at the problem of damage of low-range MEMS acceleration sensor in environments with overloads exceeding tens of thousands of g_(n)in the process of measuring external ballistic information of conventional weapon ammunition,a dual-axis shock-resistant micro acceleration sensor is proposed which can realize overload resistance up to 3×10^(4)g_(n)and a range of 50 g_(n).Finite element simulation results indicate that under a 50 g_(n)load,the displacement of accelerometer sensitive units is 1.476μm along the Y-axis with a sensitivity of 0.730 pF/g_(n),and 1.476μm along the X-axis with a sensitivity of 0.382 pF/g_(n).Introducing an embedded dual-axis acceleration sensor with ratchet tooth stop buffering structure the maximum displacement of the comb teeth under 3×10^(4)g_(n)overload that is 3.129μm along the X-axis and 3.042μm along the Y-axis,both smaller than the minimum comb spacing of 4μm,thereby effectively avoid short circuits.The maximum equivalent stresses on the X-axis and Y-axis are 180.88 MPa and 85.136 MPa,respectively,both far below the allowable stress for Si.
作者
帅清
石云波
赵锐
张志峰
SHUAI Qing;SHI Yunbo;ZHAO Rui;ZHANG Zhifeng(Science and Technology on Electronic Test&Measurement Laboratory,North University of China,Taiyuan 030051,China;Shanxi North Machinery Manufacturing Co Ltd,Taiyuan 030000,China)
出处
《传感器与微系统》
北大核心
2025年第4期92-95,100,共5页
Transducer and Microsystem Technologies
基金
国家自然科学基金资助项目(52175524)。
