摘要
在热丝化学气相沉积法大面积均匀沉积非晶硅薄膜时,利用CFD流体仿真软件,对反应室腔体建立了精确的连续流体和传热模型。以常规工艺参数为基准,遵循单一控制变量原则,设计系列试验分析了不同热丝工艺参数对基底表面温度和气体流速的具体影响,通过优化进气管的结构和布局,探讨了控制进气管进气流量均一性及进气点位对流场分布变化的影响。结果表明:在多种工艺参数下温度分布保持线性波动,显示出良好的热稳定性;流速为小范围波动,呈现中心流速低,边缘流速高的分布特征;合理的进气口流速和分布设计可以确保反应气体在沉积室内均匀分布,减少因气体流动不均导致的薄膜厚度差异。通过综合优化热流场分布,非晶硅薄膜的膜厚均匀性降低至5%以下,薄膜质量和性能显著提高。
In the large-area uniform deposition of amorphous silicon film by hot-wire chemical vapor deposition,using CFD fluid simulation software,continuous fluid and heat transfer models are established for the reaction chamber.Based on conventional process parameters and following the principle of single control variable,the design series simulation test analyzes the influence of hot wire process parameters on substrate surface temperature and gas flow rate,and discusses the control of the uniformity of the intake flow and the influence of the flow field distribution.The results show that the temperature distribution maintains linear fluctuation under various process parameters,showing good thermal stability;the flow rate fluctuates in a small range,with low center flow rate and high edge flow rate;reasonable inlet flow rate and distribution design can ensure uniform distribution of reaction gas in the deposition room and reduce the difference of film thickness caused by uneven gas flow.Through the comprehensive optimization of the thermal flow field,the membrane thickness uniformity of the amorphous silicon film is reduced to less than 5%,and the film quality and performance are significantly improved.
作者
黄宇鹏
袁吉仁
黄海宾
HUANG Yupeng;YUAN Jiren;HUANG Haibin(School of Physics and Materials,Nanchang University,Nanchang 330031,China;Jiangxi HAC General Semiconductor Technology Co.,Ltd.,Jiujiang 332020,China)
出处
《真空科学与技术学报》
北大核心
2025年第3期205-214,共10页
Chinese Journal of Vacuum Science and Technology
基金
国家自然科学基金项目(No.11964018)
江西省自然科学基金项目(20224BAB202032)
赣鄱俊才支持计划项目(20232BCJ22026)
中央引导地方科技发展资金项目(20231ZDE04023)
江西省重点研发计划项目(20243BBG71022)
山西省科技厅项目(202101060301016)
吕梁市科技局项目(2022JBGS01)。
关键词
热丝化学气相沉积
热流场
工艺参数
镀膜均匀性
Hot-wire chemical vapor deposition
Heat and flow field
Process parameters
Uniformity of coating
