摘要
试验探索了电离辐射总剂量效应对SiC MOSFET器件雪崩鲁棒性的影响,发现SiC MOSFET器件的雪崩耐量随着电离辐射总剂量的增加而不断减小,当总剂量达到600 krad时,SiC MOSFET器件的雪崩耐量下降了25.21%。此外,还发现SiC MOSFET器件发生电离辐射总剂量效应之后雪崩耐量退化程度随着负载电感的增加而增大,也即电离辐射总剂量效应和负载电感对SiC MOSFET器件鲁棒性退化呈现协同增强效果。结合试验与仿真分析,认为电离辐射在SiC MOSFET器件氧化层中引入了正电荷,导致器件阈值电压降低和漏电流增大,在雪崩过程中器件更容易发生热载流子注入效应,最终使器件雪崩鲁棒性退化。
Avalanche tolerance is one of the basis for evaluating the robustness of SiC MOSFET devices.In this paper,the influence of total ionizing dose(TID)effect on the avalanche robustness of SiC MOSFET devices is explored.Combined with experimental and simulation analysis,the internal mechanism of avalanche robustness degradation of SiC MOSFET devices caused by total dose radiation is studied.The results show that the avalanche tolerance of SiC MOSFET devices decreased with the increase of total dose radiation.When the total dose radiation reached 600 krad,the avalanche tolerance of SiC MOSFET devices decreases by 25.21%.In addition,the degradation of avalanche tolerance of SiC MOSFET devices increases with the increase of load inductance after total ionizing dose effect,that is,the TID and load inductance show a synergistic enhancement effect on the avalanche tolerance degradation of SiC MOSFET devices.The ionizing radiation introduces positive charges into oxide layer of SiC MOSFET devices,which leads to the decrease of threshold voltage and increase of leakage current,and the devices become more prone to the hot carrier injection effect during avalanche process,which ultimately induces avalanche robustness degradation of SiC MOSFET devices.
作者
梁世维
杨鑫
陈家祺
王俊
LIANG Shiwei;YANG Xin;CHEN Jiaqi;WANG Jun(College of Electrical and Information Engineering Hunnan University,Changsha 410082,China)
出处
《现代应用物理》
2024年第6期102-109,共8页
Modern Applied Physics
基金
国家自然科学基金资助项目(52207199)
湖南省自然科学基金资助项目(2023JJ30141)
中央高校基本科研业务费(531118010924)。
关键词
碳化硅
MOSFET
电离辐射总剂量效应
雪崩特性
鲁棒性
可靠性
silicon carbide
MOSFET
total ionizing dose(TID)effect
avalanche characteristics
robustness
reliability
