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Strain engineering the spin-valley coupling of the R-stacking sliding ferroelectric bilayer 2H-VX_(2)(X=S,Se,Te) 被引量:1

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摘要 The emergence of magnetic transition metal dichalcogenides has significantly advanced the development of valleytronics due to the spontaneous breaking of time-reversal symmetry and spaceinversion symmetry.However,the lack of regulation methods has prevented researchers from exploring their potential applications.Herein,we propose to use strain engineering to control the spinvalley coupling in the sliding ferroelectric bilayer 2H-VX_(2)(X=S,Se,Te).
出处 《npj Computational Materials》 CSCD 2024年第1期2198-2205,共8页 计算材料学(英文)
基金 support by the Grants from National Natural Science Foundation of China(Nos.12172386,12132020) the National Natural Science Foundation of Guangdong Province,China(No.2021B1515020021) the Guangdong Provincial Key Laboratory of Magnetoelectric Physics and Devices(No.2022B1212010008).
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