摘要
2D semiconductors offer a promising pathway to replace silicon in next-generation electronics.Among their many advantages,2D materials possess atomically-sharp surfaces and enable scaling the channel thickness down to the monolayer limit.However,these materials exhibit comparatively lower charge carrier mobility and higher contact resistance than 3D semiconductors,making it challenging to realize high-performance devices at scale.
基金
supported by SUPREME,one of seven centers in JUMP2.0,a Semiconductor Research Corporation(SRC)program sponsored by DARPA(HT search for 2D materials)
by the Computational Materials Science program of U.S.Department of Energy,Office of Science,Basic Energy Sciences under Award DE-SC0020129(2D Fröhlich implementation and EPW software development)
Computational resources were provided by the National Energy Research Scientific Computing Center(a DOE Office of Science User Facility supported under Contract No.DE-AC02-05CH11231),the Argonne Leadership Computing Facility(a DOE Office of Science User Facility supported under Contract DE-AC02-06CH11357),and the Texas Advanced Computing Center(TACC)at The University of Texas at Austin.
