摘要
Integrating monoclinic gallium oxide(β-Ga_(2)O_(3))with two-dimensional(2D)hexagonal boron nitride(h-BN)into heterostructures is of significant importance for achieving high-power device applications.The 2D-material-assisted epitaxy provides a straightforward integration method for fabricatingβ-Ga_(2)Og/h-BN vertical heterostructures.In this work,theβ-Ga_(2)O_(3)films were deposited on both polycrystalline and single-crystalline h-BN layers with different thicknesses,and two growth modes ofβ-Ga_(2)O_(3)films on h-BN,remote epitaxy,and van der Waals(vdW)epitaxy,were investigated.The results show that the potential of the sapphire substrate can penetrate the monolayer and bilayer h-BN to obtain the remote epitaxy ofβ-Ga_(2)O_(3)films,regardless of the crystallinity of h-BN.The vdW epitaxy ofβ-Ga_(2)O_(3)film can be realized on the monocrystalline h-BN substrate.Compared with the conventional and remote epitaxialβ-Ga_(2)O_(3)films on sapphire substrate,the vdW epitaxialβ-Ga_(2)O_(3)films on the single-crystalline h-BN substrate exhibit higher crystallinity.This work indicates that the 2D-material-assisted epitaxy provides a feasible scheme for the heterogeneous integration ofβ-Ga_(2)O_(3)films.
基金
This work was financially supported by the National Natural Science Foundation of China(Nos.62174009 and 62274151).
