摘要
Although quantum-dot light-emitting diodes(QLEDs)can exhibit high efficiency and long lifetime,the realization of QLEDs-based displays remains challenging due to their complex multilayer architectures and the use of unstable poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate)(PEDOT:PSS)hole injection layer(HIL).Here,we develop a novel trilayer p-type/intrinsic/n-type(PIN)QLED with only three functional layers:PTAA:TFB:F4-TCNQ(PTAA:poly[bis(4-phenyl)(2,4,6-trimethyl-phenyl)amine];TFB:poly[(9,9-dioctylfluorenyl-2,7-diyl)-co-(4,4'-(N-(4-sec-butylphenyl)diphenylamine)];F4-TCNQ:2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane)bulk-heterojunction(BHJ)hole transport layer(HTL),quantum-dot emiting layer,and ZnMgO electron transport layer.Due to well-matched energy level,increased hole transport path from PTAA to TFB,and improved hole density and enhanced hole mobility of the PTAA:TFB:F4-TCNQ BHJ HTL,the resultant trilayer PIN QLED exhibits a high external quantum efficiency(EQE)of 25.1%and an impressive peak brightness of 382,600 cd/m^(2),which are significantly higher than those of the control QLED.Moreover,the trilayer PIN QLED also shows a 1.94-fold longer operational lifetime than control QLED due to the improved device performance,reduced charge accumulation,and removal of unstable PEDOT:PSS.The developed trilayer PIN QLED,with fewer functional layers and better stability,could promote the practical application of QLED in displays and solid-state lighting.
基金
This work was supported by the National Natural Science Foundation of China(No.62304059)
the Guangxi Natural Science Foundation(No.2024GXNSFBA010355)
the Scientific and Technological Bases and Talents of Guangxi(No.Guike AD23026304).
