摘要
Self-rectifying memristor(SRM)arrays hold tremendous potential in high-density data storage and energy efficient neuromorphic computing.However,SRM arrays are mostly developed on rigid substrates and lack mechanical flexibility,limiting their applications in intelligent electronic skin,wearable technologies,etc.Here,we present a high performance SRM array based on Pt/HfO_(2)/Ta_(2)O_(5−x)/Ti heterojunctions,which can be fabricated on a flexible polyimides(PI)substrate and demonstrates exceptional memristive performance under bending conditions(bending radius(R)=1 cm,rectifying ratio>10^(4),retention time>10^(4) s and endurance>105 cycles).We demonstrate a 16×16 flexible memristor array offering noise filtering and data storage capabilities,which can be used to accurately process and store the signals transmitted by a pressure sensor array.This research represents an important advancement towards the realization of next-generation high-performance flexible electronics.
基金
This work was supported by the financial support from the National Key Research and Development Program of China(Nos.2021YFA1202600 and 2023YFF0719600)
the National Natural Science Foundation of China(Nos.U23A20322,92164108,62174164 and U22A2075)
Natural Science Foundation of Zhejiang Province(No.LR23E020001)
Hunan Provincial Natural Science Foundation(Nos.2023JJ50009 and 2023JJ30599)
Talent Plan of Shanghai Branch,Chinese Academy of Sciences(No.CASSHB-QNPD-2023-022)
Ningbo Technology Project(No.2022A-007-C).
