摘要
本文介绍了一种新的湿敏薄膜材料Ta_2O_5和一种新的硅衬底材料SOI/SDB的制备技术及它们的特性,给出了包含P-N结温敏元件的FET湿度的传感器结构及其特点.
The preparation technology and characteristics of a new humidity sensitive thin film material Ta2O5 and a new silicon substrate material SOI/SDB are introduced. The structure and features of a FET humidity sensor, include a P-N junction temperature sensor, are described.
出处
《传感技术学报》
CAS
CSCD
1992年第3期13-16,共4页
Chinese Journal of Sensors and Actuators
基金
国家自然科学基金资助项目
关键词
传感器
温敏
integrated sensor sensitive to temperature sensitive to humidity SOI/SDB technology
