摘要
Thermal management is a critical challenge in modern electronics and recent key innovations have focused on integrating diamond directly onto semiconductors for efficient cooling.However,the connection of diamond/semiconductor that can simultaneously achieve low thermal boundary resistance(TBR),minimal thermal budget,and sufficient mechanical robustness remains a formidable challenge.Here,we propose a collective wafer-level bonding technique to connect polycrystalline diamonds and semiconductors at 200℃by reactive metallic nanolayers.The resulting silicon/diamond connections exhibited an ultra-low TBR of 9.74 m^(2)K GW^(–1),drastically outperforming conventional die-attach technologies.These connections also demonstrate superior reliability,withstanding at least 1000 thermal cycles and 1000 h of high temperature/humidity torture.These properties were affiliated with the recrystallized microstructure of the designed metallic interlayers.This demonstration represents an advancement for low-temperature and high-throughput integration of diamonds on semiconductors,potentially enabling currently thermally limited applications in electronics.
基金
supported by the National Natural Science Foundation of China(Grant No.62104206)
the Fundamental Research Funds for the Central Universities(Grant No.20720220072).
