摘要
Buck-Boost converter in the total dose radiation environment will mainly bring the output voltage drift, linear adjustment rate and load adjustment rate decline and other effects, so that the output stability performance of the circuit deteriorates. Aiming at the problems of high cost,large layout area and poor universality caused by the traditional total ionizing dose effect hardening method based on process and layout, this paper proposes a total ionizing dose effect hardening design method with parallel monitoring and hardening, which can achieve total ionizing dose effect hardening at the circuit level without process. The anti-total dose capability of Buck-Boost converter is improved. The circuit design and physical implementation of the proposed method are verified based on 0.18 μm bipolar complementary metal-oxide-semiconductor(CMOS) double-diffused metal-oxide-semiconductor(DMOS)(BCD) process. The results show that the system gain decrease rate can be compensated from 19.2% to 6.2%, and the output voltage shift rate can be improved from 2.00% to 0.15% at a dose of 200×10^(3) rad(Si). Moreover, the load adjustment rate and linear adjustment rate are reduced. They are respectively decreased to 0.191 %/A and 0.093 %/V. This provides a new idea for the design of total ionizing dose effect hardening at circuit and system level.
基金
supported by the National Natural Science Foundation of China (No. 62171367)
Key R&D Program of Shaanxi Province (No. 2021GY-060)
Innovation Capability Support Program of Shaanxi Province (No. 2022TD-39)
School-Enterprise Collaboration Fund of Xi’an University of Technology (No. 252062109)。
