摘要
拓扑绝缘体由于其独特的电学和光学性能在光电器件领域得到了广泛关注.Bi_(2)Te_(3)二维材料是一种拓扑绝缘体,其体态绝缘而表面态导电,可用于高性能光电探测器的新型材料.该文使用气相沉积法分别在SiO_(2)/Si基底和聚酰亚胺(PI)柔性基底上生长出了连续、高质量的Bi_(2)Te_(3)薄膜,在此基础上构建了Bi_(2)Te_(3)光电探测器,测试结果表明Bi_(2)Te_(3)薄膜材料具有优越的宽波段光谱响应和自供电性能,并在PI柔性基底上表现出优异的抗疲劳性能,在现代光电探测领域有着非常大的应用潜力.
Topological insulators have attracted widespread attention in the field of optoelectronic devices due to their unique electrical and optical properties.As a topological insulator,Bi_(2)Te_(3) has an insulating bulk state and conductive surface state,making it a promising material for the development of new photodetectors.In this work,continuous and high-quality Bi_(2)Te_(3) films were grown on SiO_(2)/Si substrates and PI flexible substrates,separately through vapor deposition method.The photodetectors based on Bi_(2)Te_(3) show excellent broadband response and self-powered properties.Additionally,the Bi_(2)Te_(3) films showed exceptional fatigue resistance on the PI flexible substrate.Our results indicate that Bi_(2)Te_(3) has great potential of in the field of photodetection.
作者
刘霄龙
唐涵
黄茜茜
陈琼
罗斯玮
LIU Xiaolong;TANG Han;HUANG Xixi;CHEN Qiong;LUO Siwei(School of Physics and Optoelectronics,Xiangtan University,Xiangtan 411105,China)
出处
《湘潭大学学报（自然科学版）》
CAS
2024年第3期66-73,共8页
Journal of Xiangtan University(Natural Science Edition)
基金
国家自然科学基金(12304233)
湖南省自然科学基金(2021JJ40524)。
