摘要
针对未来移动通信对射频前端器件提出的多频率、高集成新要求,开展了兼具声表面波(SAW)谐振器和薄膜体声波谐振器(FBAR)技术特点的新型横向激励兰姆波谐振器研究。该文介绍了基于c轴择优取向氮化铝(AlN)压电薄膜的C波段横向激励薄膜体声波谐振器(XBAR)的结构设计、参数优化和制备方法,并进行了工艺验证。通过剥离和刻蚀等步骤制备了谐振频率4.464 GHz、品质因数3039、品质因数与频率之积(f×Q)达到1.56×10^(13)GHz、面积小于0.12 mm^(2)的低杂波XBAR谐振器,并仿真分析了其用于射频滤波器的可行性。该研究为进一步研制多频率、高集成的小型化XBAR滤波器组件提供了有效的设计技术和工艺技术支撑。
Considering the new requirements for multiple frequencies and high integration in RF front-end devices for future mobile communication,this study examines a novel laterally excited Lamb wave resonator that exhibits both SAW and FBAR technical characteristics.The structure design,parameter optimization,and preparation method for a C-band laterally excited bulk acoustic resonator(XBAR)based on a c-axis optimally oriented aluminum nitride piezoelectric film are proposed,and the process is validated.Two XBAR samples with spurious mitigation were fabricated using lift-off and ICP-RIE,achieving a resonant frequency of 4.464 GHz,a quality factor of 3039,and an f×Q product of 1.56×10^(13)GHz in a footprint smaller than 0.12 mm^(2).The application potential of the prepared resonators in an RF filter was simulated and analyzed.This study provides an effective design and process technology support for the further development of multi-frequency and highly integrated miniaturized filter modules.
作者
吴高米
马晋毅
李尚志
司美菊
唐小龙
蒋世义
江洪敏
张祖伟
WU Gaomi;MA Jinyi;LI Shangzhi;SI Meiju;TANG Xiaolong;JIANG Shiyi;JIANG Hongmin;ZHANG Zuwei(Science and Technology on Analog Integrated Circuit Laboratory,The 24th Institute of CETC,Chongqing 401332,China;CETC Chips Technology Group Co.,Ltd,Chongqing 401332,China;NIICAS(Chongqing)Technology Co.,Ltd,Chongqing 401332,China)
出处
《压电与声光》
CAS
北大核心
2024年第3期285-289,共5页
Piezoelectrics & Acoustooptics
基金
重庆市博士后科学基金资助项目(CSTB2023NSCQ-BHX0030)。
